WMSIC Electronic Components

MSKSEMI MSETA7014S2G

ModelMSETA7014S2G
PackageSOT-23-6
BrandMSKSEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
MSKSEMI MSETA7014S2G
Type
MSKSEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
MSKSEMI
Electronic Component
MSETA7014S2G
Electronic Component
1
Package
SOT-23-6
Type
Switch
Electronic Component
Power Electronic Switch
Electronic Component
1g
Electronic Component
1
Channel Count
1
Features
Output
Electronic Component
BM0264464020
Resistor
35mΩ
Operating Temperature
40℃~+85℃
Operating Voltage
4V~36V
Current
3A

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MSETA7014S2G 高侧开关产品概述

一、产品定位与核心价值

MSETA7014S2G是美森科(MSKSEMI)推出的单通道高侧开关,针对紧凑空间、中小功率负载场景设计,核心价值在于「小封装集成双重保护,兼顾性能与可靠性」——可直接替代传统继电器或分立MOS管方案,简化电路设计的同时降低成本与体积。

二、关键电气性能参数

该芯片核心参数覆盖主流应用需求,无需额外外围电路即可满足多数场景:

  1. 工作电压范围:4V~36V,兼容12V汽车系统、24V工业控制、5V/3.3V消费电子等多平台,无需电平转换;
  2. 负载能力:最大连续输出电流3A,峰值电流可支撑短时间重载(如电机启动瞬间),覆盖常见中小功率负载;
  3. 导通损耗:典型导通电阻35mΩ,3A负载下功耗仅0.315W,大幅降低发热,无需额外散热片;
  4. 控制逻辑:高电平有效(VIH≥2V即可导通),兼容3.3V/5V MCU输出,直接对接单片机无需额外驱动。

三、双重保护功能详解

芯片内置过压保护(OVP) 和过温保护(OTP),从硬件层面提升系统可靠性:

  1. 过压保护:当输入电压超出额定上限(典型38V)时,芯片自动关断输出,防止后端负载或自身因过压击穿;
  2. 过温保护:结温超过150℃阈值时关断,温度降至120℃左右自动恢复,避免长时间高温导致器件老化,适合环境温度波动大的场景(如汽车发动机舱、户外工业设备)。

四、封装与典型应用场景

  1. 封装特性:采用SOT-23-6小封装(尺寸1.6×2.9×1.1mm),相比传统TO-252封装节省60%以上PCB空间,适合高密度模块设计;
  2. 典型应用:
    • 汽车电子:中控面板小负载控制、车灯辅助开关、传感器供电;
    • 工业控制:PLC I/O模块、小型继电器驱动、电机启停控制;
    • 消费电子:智能家居设备(智能灯控、传感器节点)、便携式电源管理;
    • 通信设备:小型基站辅助供电、无线模块电源切换。

五、选型对比优势

相比同类单通道高侧开关,MSETA7014S2G具备3个核心竞争力:

  1. 小封装集成保护:SOT-23-6封装下同时实现3A电流与双重保护,无需额外添加OVP/OTP外围电路;
  2. 低导通电阻:35mΩ导通电阻在同电流、同封装产品中处于领先,发热控制更优,延长负载与芯片寿命;
  3. 宽温可靠性:-40℃~+85℃工作温度范围,满足工业级与汽车级基础应用需求,适配极端环境。

该芯片通过优化内部MOSFET设计,在小封装中平衡了电流能力与散热,是紧凑设计场景下替代分立方案的理想选择。

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