WMSIC Electronic Components

MICRONE ME2108A30PG

ModelME2108A30PG
PackageSOT-89-3
BrandMICRONE
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 23+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
MICRONE ME2108A30PG
Type
MICRONE
Minimum package
1000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
MICRONE
Electronic Component
ME2108A30PG
Electronic Component
1
Package
SOT-89-3
Electronic Component
DC-DC Power Supply IC
Electronic Component
0.132g
Electronic Component
1
Type
Electronic Component
Synchronous
Electronic Component
Electronic Component
BM0227688973
Operating Temperature
25℃~+85℃
Operating Voltage
900mV~6.5V
Switching Frequency
180kHz
Electronic Component
Electronic Component
Output Voltage
3V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

ME2108A30PG 产品概述

一、产品简介

ME2108A30PG 是南京微盟(MICRONE)推出的一款升压型 DC-DC 控制器(固定输出 3.0V),封装为 SOT-89-3。器件支持超低电压启动并具有宽输入工作范围,适用于电池供电和便携设备的升压场景。该器件采用外置开关管拓扑(升压式),静态电流极低,适合对待机功耗敏感的应用。

二、主要规格(概要)

  • 功能类型:升压型(Boost controller)
  • 输入电压范围:0.9V ~ 6.5V(对常见电池电压 2.7V~5.6V 区间表现最佳)
  • 输出电压:固定 3.0V
  • 输出电流:最大 400mA(受外置开关器件与外围元件限制)
  • 开关频率:典型 180kHz
  • 静态电流(Iq):约 50µA(低待机功耗)
  • 同步整流:否(需外接整流二极管)
  • 开关管:外置 N 沟 MOSFET(用户自选)
  • 工作温度:-25°C 至 +85°C
  • 封装:SOT-89-3
  • 输出通道:单路

三、特点与优势

  • 超低输入启动能力(可自 0.9V 启动),适合单节电池或低压电源启动场景。
  • 低静态电流(~50µA),极大延长电池待机寿命。
  • 中等开关频率(180kHz),在效率和外部元件体积之间取得平衡,可使用较小体积的电感与电容。
  • 外置开关管设计便于用户根据功率、效率或成本选择最优 MOSFET,灵活性高。
  • 固定 3.0V 输出,简化反馈网络与布局。

四、典型外围选型建议

  • 开关 MOSFET:选择门阈低、Rds(on) 低且耐压余量足够的 N 沟功率 MOSFET;Vds≥12V(考虑裕量),Rds(on) 尽可能小以降低开关损耗和导通损耗。
  • 整流二极管:使用低正向压降的肖特基二极管,电流额定值建议 ≥1A,降低损耗。
  • 电感:选择直流电阻低、饱和电流大于输出峰值的电感,典型电感值根据输出电流/纹波要求在几 µH 至几十 µH 之间。
  • 输入/输出电容:低 ESR 电解或陶瓷电容,确保稳定性与瞬态响应。
  • 注意外围元件的电流与功耗余量设计,保证在最大负载下器件和元件不过热。

五、布局与热设计要点

  • MOSFET、二极管与电感之间的走线尽量短且宽,减小寄生电感与 EMI。
  • 输入与输出电容靠近芯片引脚布置,减少回流环路面积。
  • SOT-89-3 封装热阻相对较大,高负载或持续大电流时需注意散热,必要时在 PCB 增加铜箔散热区域。
  • 避免将敏感的反馈引脚与高电流回路平行走线,降低噪声耦合。

六、典型应用场景

  • 低压电池供电的便携设备、传感器节点、无线模块电源提升至 3.0V。
  • 需要超低待机电流的设备(遥控器、可穿戴设备、IoT 终端)。
  • 对外形尺寸与成本敏感,同时需要可选 MOSFET 优化效率的方案。

总结:ME2108A30PG 以低启动电压、低静态电流和外置开关器件的灵活性为特点,适合电池供电、低功耗且对尺寸有要求的升压电源设计。在实际应用中,通过合理选择外部 MOSFET、肖特基二极管与电感,并做好 PCB 布局与散热,能获得较高的效率与可靠性。

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