WMSIC Electronic Components

BGU7258X

ModelBGU7258X
PackageHXSON-6(1.6x1.6)
BrandNXP
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
NXP BGU7258X
Type
NXP
Unit
Electronic Component
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
NXP
Electronic Component
BGU7258X
Electronic Component
1
Package
HXSON-6(1.6x1.6)
Electronic Component
RFLow Noise Amplifier
Electronic Component
0.023g
Electronic Component
1
Electronic Component
BM0264689771
Operating Temperature
40℃~+85℃
Power Supply Voltage
3V~3.6V
Static Current(Iq)
1uA
Electronic Component
Electronic Component
Electronic Component
4000
Power Supply (Vdd-Vss)
3.6V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

BGU7258X 产品概述

一、概述

BGU7258X 是恩智浦(NXP)面向 5 GHz–6 GHz ISM 频段的射频放大器集成电路(RF AMP),采用紧凑的 HXSON-6 (1.6 mm × 1.6 mm) 封装。器件设计以低功耗、体积小、易于在射频前端或收发链路中集成为目标,适合无线传感器、短距离数据链路、ISM 频段无线设备以及其他 5 GHz 周边应用场景。器件支持单电源供电,工作电压范围和低静态电流使其非常适合电池驱动或功耗受限的便携式终端。

二、主要电气参数(关键基础参数)

  • 最大电源电压差 (Vdd–Vss):3.6 V
  • 单电源供电范围:3.0 V ~ 3.6 V
  • 静态电流 (Iq):典型 1 μA(超低待机功耗,有利于延长电池寿命)
  • 工作温度范围:−40 ℃ ~ +85 ℃
  • 频率覆盖:ISM 波段 5 GHz ~ 6 GHz(射频放大器工作频段)

(注:以上为器件的核心限制与供电/环境规范,具体增益、噪声系数、输出功率等射频性能请参照厂商数据手册中的典型曲线与器件等级说明。)

三、封装与机械特征

  • 封装类型:HXSON-6
  • 外形尺寸:1.6 mm × 1.6 mm(超小型封装,适合高密度贴片设计)
  • 引脚数:6 引脚(典型布局用于 RF 输入/输出、Vdd 引脚及地)
  • 热管理:小型封装热阻相对较高,PCB 散热和良好地平面对于连续大功率工作有重要意义。

四、典型功能与优势

  • 低静态电流:1 μA 等级的静态电流显著降低器件待机耗电,适合电池供电系统(睡眠/待机模式下功耗几乎可以忽略)。
  • 单电源供电:3.0–3.6 V 的宽松单电源范围便于与常见电池或系统电源直接兼容。
  • 小型化封装:HXSON-6 1.6×1.6 mm 可用于空间受限的终端与模块化天线子系统。
  • ISM 频段覆盖:专为 5–6 GHz 工况优化,适用于 5.8 GHz ISM 以及相邻 5 GHz 应用。

五、典型应用场景

  • 5.8 GHz ISM 频段无线模块(传输/接收前端)
  • 无线传感器节点与低功耗物联网设备
  • 短距离数据链路(遥控、遥测)
  • 天线前置放大、链路预算优化的接收链路
  • 射频评估模块与参考设计中的放大单元

六、布局与使用建议

  • 电源去耦:尽量在器件 Vdd 引脚附近放置高品质的旁路电容(如 100 nF 陶瓷)与一个较大的电解/钽电容以抑制低频纹波,减小电源阻抗。
  • 地平面:在器件下方和周围提供连续的接地平面,并通过多个微孔(via)将顶层地与内部/底层地相连,以降低地阻和改善射频回流路径。
  • 输入/输出匹配:尽管器件针对 5–6 GHz 进行了优化,仍建议根据目标板材、走线与连接器进行输入/输出阻抗匹配(常见为 50 Ω)以获得最佳增益与回损指标。
  • 射频隔离:若在单板上有多个 RF 元件,注意隔离和走线布局以减少耦合与寄生振荡。
  • 热管理:若工作在高平均功率下,增加散热铜箔面积并优化接地 VIA 布局有助于散热。

七、封装引脚与电路参考(通用说明)

  • 引脚功能通常包含:RF_IN、RF_OUT、Vdd、GND(以及可能的偏置或外部控制脚)。在无厂商引脚图的情况下,设计时请参考官方封装图与引脚排列,严格按照数据手册连线与去耦要求布板。

八、注意事项与可靠性

  • 不超过最大电源电压 3.6 V,以免导致器件过压损伤。
  • 在极端温度(−40 ℃ 或 +85 ℃)下长期工作需验证性能漂移与线性度。
  • 在射频输入端避免直流耦合超过器件允许的电压,必要时使用耦合电容或隔离电路。
  • 在量产前应进行板级射频调试与功耗验证,确保实际应用场景下的性能满足指标。

九、结语

BGU7258X 以其超小型 HXSON-6 封装、低静态电流和针对 5–6 GHz ISM 频段的设计,适合对体积与功耗有严格要求的无线产品。为发挥器件最佳性能,推荐严格按照厂商数据手册的电源去耦、接地和匹配建议进行 PCB 设计与调试。如需进一步的射频参数(增益、噪声系数、输入/输出回损、线性度等)或参考电路图,请参考恩智浦官方数据手册或联系供应商获取完整技术资料。

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