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NCE NCE3035Q
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- NCE NCE3035Q
- Type
- NCE
- Minimum package
- 5000 卷
Technical parameters
- Electronic Component
- NCE
- Electronic Component
- NCE3035Q
- Electronic Component
- 1
- Package
- DFN-8(3x3)
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.108g
- Electronic Component
- 1
- Electronic Component
- BM0227782042
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 35W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 2.33nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
NCE3035Q 产品概述
一、产品简介
NCE3035Q 是新洁能（NCE）推出的一款高电流、低导通电阻的 N 沟道功率 MOSFET，适用于中低压电源与开关应用。器件额定漏源耐压 30V，连续漏极电流 35A，封装为小型 DFN-8 (3×3)，单只供应，工作温度范围宽（-55℃ ~ +150℃），适合空间受限且要求高功率密度的场合。
二、主要电气参数
- 漏源电压 Vdss：30V
- 连续漏极电流 Id：35A
- 导通电阻 RDS(on)：11mΩ @ Vgs=4.5V
- 阈值电压 Vgs(th)：3V @ 250µA
- 总栅极电荷 Qg：45nC @ 10V
- 输入电容 Ciss：2.33nF，输出电容 Coss：460pF，反向传输电容 Crss：230pF
- 功耗 Pd：35W（需结合散热设计评估实际允许电流）
三、封装与热管理
DFN-8 (3×3) 封装体积小、寄生电感低，有利于快速开关和低 EMI 设计。但封装限制了散热能力，实际能承受的连续电流受 PCB 散热（铺铜面积、过孔与底铜）影响很大。建议在器件底部和焊盘下方采用大量散热铜箔与通孔，引出热流到多层 PCB 内的散热层。
四、应用场景
适用于同步整流、电源开关、DC-DC 转换、负载开关、电机驱动前级以及车载或工业电源等 30V 级别的高电流场合。凭借低 RDS(on) 与较大 Id，适合要求低导通损耗的功率路径。
五、设计注意事项与建议
- 栅极驱动：Qg=45nC，建议使用能提供足够电流的驱动器或驱动级（±10V 驱动），并配合合适的栅极电阻以控制开关速度与过冲。
- 开关损耗：Ciss/Coss/Crss 值对开关损耗与反向恢复行为影响明显，设计时需评估开关频率与能量回收策略。
- 布局：采用短且宽的漏极/源极走线，源极优先做 Kelvin 引出以降低测量误差；为减小热阻，器件下方及大电流回路尽量加厚铜箔与过孔。
- 可靠性：阈值电压 3V 表明对低压门极敏感性一般，若需在 4.5V 驱动下获得标称 RDS(on)，应保证驱动电平稳定。
六、采购与使用
品牌：NCE（新洁能）；封装：DFN-8 (3×3)；单只供应。选型时请结合实际工作温度、散热方案和开关频率评估器件在实际电路中的损耗与结温，以确保长期可靠运行。若需替代或并联使用，请验证共享散热与电流均流特性。
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