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NCE NCE20P45Q
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- NCE NCE20P45Q
- Type
- NCE
- Minimum package
- 5000 卷
Technical parameters
- Electronic Component
- NCE
- Electronic Component
- NCE20P45Q
- Electronic Component
- 1
- Package
- DFN-8(3.3x3.3)
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.114g
- Electronic Component
- 1
- Electronic Component
- BM0212456855
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 80W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 19V
- Capacitor(Ciss)
- 3.5nF
- Gate (Qg)
- 55nC@10V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
NCE20P45Q 产品概述
概述
NCE20P45Q是一款高性能的P沟道场效应管（MOSFET），由新洁能（NCE）公司生产，专为需要高功率和高电流应用而设计。它的额定功率为80W，工作电压范围为19V，最大持续电流可达45A，清晰地显示出其在高负载条件下的优越性能。NCE20P45Q的封装采用DFN-8（3.3x3.3mm），具备紧凑的尺寸和出色的散热性能，非常适合高密度电路板（PCB）设计。
关键特性
强大的电流承载能力： NCE20P45Q能够持续承载高达45A的电流，这使得它在许多高功率应用中表现卓越，包括电源轨、驱动电路、电机控制或者其他需要高电流的场景。
较高的功率损耗能力： 该器件的最大功率规格为80W，意味着它能够在相对较高的功率条件下稳定工作，降低了额外的热管理需求。
宽电压范围： 工作电压高达19V，适用范围广泛，能够满足不同电源需求，提高了电路设计的灵活性。
低栅极电阻： 该MOSFET的低栅极电阻特性能够有效降低驱动损耗，提高开关效率，尤其在高速开关应用中表现出色。
优良的散热性能： DFN-8（3.3x3.3mm）封装不仅体积小，而且具有良好的导热性，使得器件在高功率工作状态下能够有效散热，提升其寿命和可靠性。
高可靠性： 作为一款半导体产品，NCE20P45Q经过严格的电性测试，具备良好的耐压特性和热稳定性，能够承受严苛的工作环境。
应用领域
NCE20P45Q适用于广泛的应用场合，包括：
电源管理： 作为电源转换器、DC-DC转换器中的开关元件，有效地提升能效并降低能耗。
电动机驱动： 适用于电动机的控制电路，如步进电机和直流电机，为其提供稳定可靠的电力支持。
LED驱动： 可用于LED灯具的驱动，确保其工作稳定，并提供足够的电流以满足高亮度需求。
消费电子： 在手机、平板电脑等消费电子产品中，优化电源分配，延长电池续航时间。
性能参数
- 最大额定电压（Vds）：19V
- 最大额定电流（Id）：45A
- 功率耗散（Pd）：80W
- 封装类型：DFN-8（3.3x3.3mm）
总结
NCE20P45Q作为一款高效、可靠的P沟道MOSFET，在高功率和高电流应用中展现了其卓越的性能，其紧凑的DFN-8封装设计不仅大大节省了空间，也为工程师在电路设计时提供了灵活性。凭借耐用的材料和优越的散热特性，NCE20P45Q能够满足现代电子设备对功率管理的严苛要求，是各种电源和驱动应用的理想选择。对于追求性能与效率的工程师，NCE20P45Q无疑是值得信赖的电子元器件。
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