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NCE NCE60H15A
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- NCE NCE60H15A
- Type
- NCE
- Unit
- Electronic Component
- Minimum package
- 1000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- NCE
- Electronic Component
- NCE60H15A
- Electronic Component
- 1
- Package
- TO-220
- Electronic Component
- 1 N
- Electronic Component
- MOSFET
- Electronic Component
- 2.73g
- Electronic Component
- 1
- Electronic Component
- BM0226357245
- Operating Temperature
- 55℃~+175℃
- Power Dissipation(Pd)
- 220W
- Electronic Component
- Electronic Component
- Electronic Component
- 1000
- Voltage(Vdss)
- 60V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
NCE60H15A 产品概述
一、主要参数
NCE60H15A（品牌：NCE/新洁能）为单只N沟道功率MOSFET，封装为TO-220。关键电气参数如下：
- 漏源电压 Vdss：60V
- 连续漏极电流 Id：150A
- 导通电阻 RDS(on)：3.1mΩ @ Vgs=10V, Id=75A
- 栅极阈值 Vgs(th)：3V
- 总栅极电荷 Qg：130.8nC @ Vgs=10V
- 输入电容 Ciss：5.451nF @ 30V；反向传输电容 Crss：488pF @ 30V
- 功率耗散 Pd：220W（视散热条件而定）
- 工作结温范围：-55℃ ~ +175℃（Tj）
二、性能亮点与电气特性
- 低导通电阻：3.1mΩ（10V栅压）在高电流工况下带来更低的导通损耗，适合大电流低压差应用。
- 大电流能力：标称150A持续电流，配合低RDS(on)适用于大功率开关与负载回路，但实际可用电流受散热及封装限制影响。
- 栅极电荷与开关特性：Qg=130.8nC 表明器件栅极电容较大，驱动器需具备足够驱动能力以实现快速切换；半导体的输入电容Ciss与Crss会带来Miller效应，对dv/dt和开关损耗有明显影响。举例：单次栅极能量约为0.5·Qg·Vgs = 654nJ（Vgs=10V），在100kHz下对应约65.4mW的栅极损耗（仅供估算）。
- 高温性能：Tj最高175℃，在苛刻环境下仍有可靠性优势，但安全余量与热管理不可忽视。
三、典型应用场景
- 开关电源（低压DC-DC转换、PFC二极管替代或同步整流）
- 电机驱动与电源分配模块（需大电流承载）
- 汽车电子与工业电源（在符合工作温度和散热条件下）
- 高频低压功率开关（需权衡开关损耗与导通损耗）
四、设计与使用建议
- 推荐栅极驱动：为达到低RDS(on)建议驱动电压为10V。由于Qg较大，驱动器应能提供较高瞬时电流，避免开关缓慢造成额外开关损耗。
- 散热设计：Pd=220W为器件极限能耗，实际应用需按PCB热阻、散热片或风冷条件评估，TO-220易于安装散热器以降低结温。
- 栅极阻尼与布板：为控制振铃与过渡损耗，常用串联栅阻5–47Ω，且注意走线短且阻抗合理以降低寄生电感。
- 并联注意事项：可并联使用以提升电流能力，但需匹配RDS(on)与布局平衡，避免热失控及不均流。
- 保护设计：建议配合适当的驱动、过流保护与橫向摆放的箝位/RC缓冲，提升可靠性。
总结：NCE60H15A 是一款面向高电流、低压差场合的TO-220封装N沟道MOSFET，具有低导通阻抗和较高额定电流，但其较大的栅极电荷和电容要求在设计时提供足够的驱动能力与良好散热。
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