WMSIC Electronic Components

NCE NCE10TD60BD

ModelNCE10TD60BD
PackageTO-263
BrandNCE
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

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Technical data

Product details

20 specifications

Core information

Product name
NCE NCE10TD60BD
Type
NCE
Unit
Electronic Component
Minimum package
800 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
NCE
Electronic Component
NCE10TD60BD
Electronic Component
1
Package
TO-263
Electronic Component
IGBT / Module
Electronic Component
2.182g
Electronic Component
1
IGBTType
FS
Electronic Component
BM0230007568
Power Dissipation(Pd)
83W
(Eon)
210uJ
(Eoff)
110uJ
Electronic Component
Electronic Component
Electronic Component
800

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

NCE10TD60BD — 产品概述

一、产品简介

NCE10TD60BD 为新洁能(NCE)推出的场截止型(FS)IGBT,额定集-射极击穿电压Vces=600V,持续集电极电流Ic=20A,适用于中高压开关场合。器件封装为TO-263(D2PAK),便于表面贴装和散热处理,耗散功率Pd=83W(在规定散热条件下)。

二、主要电气参数

  • Vces (V):600V
  • Ic (A):20A
  • Pd (W):83W
  • VCE(sat):1.9V @ Ic=10A, Vge=15V
  • Vge(th):4V @ Ig=1mA
  • Qg:44nC @ Vge=15V
  • Cies:1.127nF;Coes:40pF;Cres:24pF
  • Ifm(正向脉冲电流):30A
  • 开/关延迟:Td(on)=20ns,Td(off)=73ns
  • 开/关能量损耗:Eon=210µJ,Eoff=110µJ
  • 反向恢复时间Trr=158ns

三、性能特点

  • 600V耐压与20A连续电流能力,适合中功率转换与驱动应用。
  • 低VCE(sat)(1.9V@10A)可减小导通损耗,提高效率。
  • 较小的输出与传输电容(Coes、Cres)和中等Qg(44nC)使得器件在开关速度与驱动功率之间取得平衡,适合要求中等开关频率的场合。
  • 开关损耗由Eon/Eoff给出,Eoff相对较小,有助于降低关断瞬态能耗。

四、典型应用场景

  • 太阳能逆变器、充电桩逆变/整流模块
  • 电机驱动与工业变频器(中功率)
  • 开关电源(SMPS)、不间断电源(UPS)
  • 焊机、感应加热等需要600V耐压和中等开关速度的功率转换设备

五、驱动与选型建议

  • 推荐栅极驱动电压约12–15V(规格数据以15V条件下测试),栅极阈值约4V,应保证关断时Vge回到0V以下以避免误导通。
  • Qg=44nC 表明驱动器需提供瞬时较大电流才能实现快速转态;例如1A驱动电流约对应44ns的理论充电时间,可根据系统要求与Eon/Eoff折中选择合适的门极电阻(一般从几欧姆到几十欧姆范围选择)。
  • 反向恢复时间Trr=158ns,建议在含续流二极管或吸收网络的拓扑中考虑二次峰值和振荡抑制,必要时加RC吸收或缓冲器件以保护器件和减小电磁干扰。
  • 布局要点:缩短信号与功率回路环路面积,门极走线尽量短且靠近器件,设置良好接地与散热路径。

六、封装与散热、可靠性

TO-263 封装便于与散热片或PCB散热铜箔结合使用。Pd=83W 为额定耗散能力,但实际应用中需根据工作温度、散热条件和热阻计算安全工作点并预留裕量。高频开关应用应关注封装热阻与散热设计,防止结温超过器件额定值以延长可靠性和寿命。

总结:NCE10TD60BD 为一款面向中高压、中功率转换的场截止型IGBT,兼顾较低导通损耗与可控的开关性能,适合逆变、电源和电机驱动等应用。选型与驱动时应重点考虑栅极驱动能力、散热设计及续流/吸收方案。

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