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NCE NCE65T180T
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- NCE NCE65T180T
- Type
- NCE
- Minimum package
- 450 卷
Technical parameters
- Electronic Component
- NCE
- Electronic Component
- NCE65T180T
- Electronic Component
- 1
- Package
- TO-247
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 8.33g
- Electronic Component
- 1
- Electronic Component
- BM0265083927
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 188W
- Electronic Component
- Electronic Component
- Electronic Component
- 450
- Voltage(Vdss)
- 650V
- Capacitor(Ciss)
- 2.25nF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
NCE65T180T 产品概述
一、产品简介
NCE65T180T 是新洁能（NCE）推出的一款高压 N 沟道功率 MOSFET，单片封装为 TO-247-3，适用于中高压开关电源与电力电子场景。该器件额定漏源电压 Vdss 为 650V，连续漏极电流 Id 为 21A，导通电阻较低，兼顾耐压与导通损耗。
二、主要性能参数
- 类型：N 沟道功率 MOSFET（单只）
- 漏源电压 Vdss：650V
- 连续漏极电流 Id：21A
- 导通电阻 RDS(on)：180 mΩ @ Vgs = 10V
- 阈值电压 Vgs(th)：4V
- 栅极电荷 Qg：36 nC @ Vgs = 10V
- 输入电容 Ciss：2.25 nF
- 反向传输电容 Crss：1.6 pF
- 最大耗散功率 Pd：188 W（需结合散热条件评估）
- 工作温度范围：-55 ℃ ~ +150 ℃
- 封装：TO-247-3，品牌：NCE（新洁能）
- 数量：1 个 N 沟道器件
三、设计要点与建议
- 栅极驱动：由于 Qg = 36 nC（10V），驱动电路需具备足够的驱动电流以实现快速开关，建议使用能提供较大脉冲电流的门极驱动器并配合 10–22 Ω 的门阻以控制振铃与电磁干扰。
- 损耗与散热：器件 Pd 标称 188W，但实际可用功耗取决于散热（散热器、风冷、铜箔面积）。设计时应计算导通损耗 I^2·RDS(on) 与开关损耗，并预留合适的散热裕量。
- 开关过冲保护：高压开关容易产生电压尖峰，建议在必要时采用 RC 吸收、能量回收或 TVS 二极管，并优化布局以降低寄生电感。
- 并联与冗余：若需并联多管以降低等效 RDS(on)，应注意器件间的不均流与热分布，采用源端并联电阻或单独散热方案以提高可靠性。
- 布局建议：输入输出回路尽量缩短高电流回路，地线分层，减少寄生电感与环路面积，提高 EMI 性能。
四、典型应用场景
- 开关电源（SMPS）高压侧开关
- 功率因数校正（PFC）开关元件
- 反激/正激式变换器主开关
- 中高压逆变与电机驱动前端
- 工业电源与电力电子控制模块
五、封装与可靠性
TO-247-3 封装便于螺栓安装到散热器，热阻较低，适合高功率密度设计。器件工作温度范围宽（-55 ℃ 至 +150 ℃），适应苛刻环境。但存储与装配时需做好 ESD 防护与焊接工艺控制，避免因过热或静电损伤。
六、采购信息与注意事项
- 型号：NCE65T180T，品牌：NCE（新洁能），封装：TO-247-3，数量：1 个。
- 选型时请核对实际工作电压、工作频率与热管理方案，必要时联系供应商获取完整数据手册和器件批次信息。
- 在样机验证阶段建议建立完整的热仿真与开关损耗测试，验证系统级可靠性。
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