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NCE NCE40P20Q
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- NCE NCE40P20Q
- Type
- NCE
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- NCE
- Electronic Component
- NCE40P20Q
- Electronic Component
- 1
- Package
- DFN-8L(3.3x3.3)
- Electronic Component
- 1 P
- Type
- P
- Electronic Component
- MOSFET
- Electronic Component
- 0.13g
- Electronic Component
- 1
- Electronic Component
- BM0225278027
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 30W
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
- Voltage(Vdss)
- 40V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
NCE40P20Q 产品概述
一、概述
NCE40P20Q 是一款 P 沟道功率 MOSFET，封装为 DFN-8L (3.3×3.3mm)，面向需要紧凑封装与高电流能力的高侧开关与电源管理场景。器件额定漏源电压 40V，适用于 12V 及中低压电源系统的高侧开关、负载断开与保护电路。
二、主要参数（关键指标）
- 类型：P 沟道 MOSFET
- 漏源电压 Vdss：40V
- 连续漏极电流 Id：20A
- 导通电阻 RDS(on)：28 mΩ @ Vgs = 4.5V
- 阈值电压 Vgs(th)：2.4V @ 250 μA
- 总栅电荷 Qg：54 nC @ 10V
- 输入电容 Ciss：2.8 nF
- 输出电容 Coss：300 pF
- 反向传输电容 Crss：275 pF
- 功耗 Pd：30W（取决于 PCB 散热条件）
- 工作温度范围：-55°C ~ +150°C
三、器件特性与设计要点
- RDS(on) 在 Vgs=4.5V 时为 28 mΩ，说明在较低栅压下也能获得较低导通损耗，适合直接由逻辑电平或微控制器配合栅极驱动电路实现高侧控制。
- Qg 较大（54 nC @10V），驱动时需考虑驱动器驱动能力与切换损耗，短脉冲或高速开关时建议使用带源阻抗小、驱动电流足够的专用栅极驱动器，并配合合理的栅阻（典型 5–100 Ω）以抑制振铃与电磁干扰。
- Ciss/Coss/Crss 表征了器件的开关行为与米勒效应，Crss 较高时米勒电容会影响开关速度与产生额外的栅-源耦合，布线上应尽量缩短栅极到驱动器的距离并做好旁路去耦。
四、封装与散热建议
DFN-8L (3.3×3.3mm) 提供紧凑的尺寸与良好的热性能。为了发挥 30W 的耗散能力，应在 PCB 上设计大面积散热铜箔和适量的过孔（thermal via）将热量传导到多层板内部或背面散热层。器件的源/耗散焊盘应使用低阻抗宽铜区域，保证电流路径短且阻抗低。
五、典型应用
- 电源管理：高侧开关、负载切换与电池断开保护
- DC-DC 转换器中的同步与保护功能（低压中高边）
- 汽车电子与工业控制中对 12V/24V 子系统的电源控制（在 40V 额定内）
- 便携设备与功率分配模块的电流切换
六、使用建议
- 在高频开关场合选用合适的栅极驱动器以降低开关损耗；若由 MCU 直接驱动，需注意驱动电流与切换速度限制。
- 布局上保证驱动器与 MOSFET 栅极之间走短线，并在电源输入处加大旁路电容以减小尖峰电压。
- 考虑器件阈值与温度系数，在高温工况下仍需保证足够的栅压余量以维持所需 RDS(on)。
总结：NCE40P20Q 在小型 DFN 封装中实现了较低的导通电阻与较高的电流承载能力，非常适合对体积与性能有较高要求的高侧开关和电源管理应用。合理的驱动与 PCB 散热设计可充分发挥其性能优势。
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