WMSIC Electronic Components

NCE NCE80TD65BT

ModelNCE80TD65BT
PackageTO-247
BrandNCE
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
NCE NCE80TD65BT
Type
NCE
Unit
Electronic Component
Minimum package
600 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
NCE
Electronic Component
NCE80TD65BT
Electronic Component
1
Package
TO-247
Electronic Component
IGBT / Module
Electronic Component
7.77g
Electronic Component
1
IGBTType
FS
Electronic Component
BM0084416122
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
390W
(Eon)
1.43mJ
(Eoff)
1.45mJ
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

NCE80TD65BT 产品概述

一、产品简介

NCE80TD65BT 是新洁能(NCE)推出的一款高压场截止型(FS,场截止)功率 IGBT,采用 TO-247 封装,面向工业电力电子领域的高功率开关应用。器件在650V耐压等级下提供出色的开关性能与热耗散能力,适用于逆变器、电机驱动、开关电源与不间断电源等场合。

二、主要电气参数

  • 集射极击穿电压 Vces:650 V
  • 集电极直流额定电流 Ic:160 A
  • 正向脉冲电流 Ifm:240 A
  • 栅极阈值电压 Vge(th):4 V @ 1 mA
  • 工作温度范围:-55 ℃ ~ +150 ℃
  • 封装:TO-247

三、开关性能与寄生参数

  • 开启延迟时间 Td(on):19 ns
  • 关断延迟时间 Td(off):172 ns
  • 导通损耗 Eon:1.43 mJ
  • 关断损耗 Eoff:1.45 mJ
  • 输入电容 Cies:9.188 nF
  • 输出电容 Coes:258 pF
  • 反向传输电容 Cres:181 pF
  • 反向恢复时间 Trr(内含二极管):194 ns
  • 总栅极电荷量 Qg:331 nC @ 15 V

以上参数表明器件在 650 V 级别下具备较快的开关响应与可控的开关损耗,同时输入电容和较大的栅电荷量要求驱动器提供较大瞬态电流以实现高速切换。

四、热特性与功耗

  • 最大耗散功率 Pd:390 W(在规定散热条件下)
    TO-247 封装结合良好散热设计(散热片或液冷)能够有效释放器件热量。建议在高功率工况下采用低热阻散热方案并保证良好电气绝缘与机械接触。

五、典型应用场景

  • 中高功率逆变器与光伏/储能变流器
  • 工业伺服与电机驱动器
  • 不间断电源(UPS)与电源转换设备
  • 感应加热、电焊等高脉冲能量应用

六、设计与使用建议

  • 栅极驱动:由于 Qg ≈ 331 nC(@15 V)且 Vge(th) ≈ 4 V,建议采用能提供大瞬态驱动电流的栅极驱动器,驱动电压常用 15 V;为平衡开关损耗与电磁兼容,可通过调整栅极电阻(从数Ω到数十Ω,根据系统要求选择)来控制开关斜率。
  • 关断保护:器件 Eoff 与 Eon 在同级别产品中处于合理范围,但在高能量开关场合仍建议并联合适的 RC 吸收或 RCD 钳位电路以限制过压及减小开关应力。
  • PCB 布局:尽量缩短集电极、发射极与栅极回路的寄生电感与回路面积,优化散热路径并单独布局驱动与功率回路以降低干扰。
  • 散热与机械:TO-247 封装需可靠拧紧到散热片或绝缘垫上,保证热阻最小化并按厂方推荐的扭矩安装,必要时配合导热硅脂或绝缘垫片以提升热传导。

七、注意事项

  • 在并联或高应力短脉冲(Ifm)应用时需评估器件的电流共享能力与瞬态温升,合理预留安全裕度。
  • 实际设计应参考完整的器件数据手册进行 SOA(安全工作区)评估与热仿真,严格按照系统工作点验证开关损耗与温升。

总结:NCE80TD65BT 是一款适合中高压、高功率场合的 TO-247 封装场截止型 IGBT,具有良好的开关特性和热耗散能力。合理的驱动、保护与散热设计能充分发挥其性能,满足工业级功率转换与驱动需求。

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