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NCE NCE65TF130T
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- NCE NCE65TF130T
- Type
- NCE
- Unit
- Electronic Component
- Minimum package
- 450 管
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- NCE
- Electronic Component
- NCE65TF130T
- Electronic Component
- 1
- Package
- TO-247
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 7.73g
- Electronic Component
- 1
- Electronic Component
- BM0258851862
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 260W
- Electronic Component
- Electronic Component
- Electronic Component
- 450
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
NCE65TF130T 产品概述
一、简介
NCE65TF130T 是新洁能（NCE）推出的一款高耐压 N沟道功率 MOSFET，封装为 TO-247，额定漏源电压 Vdss 为 650V，适用于中高压开关电源、功率因数校正（PFC）、逆变器和电机驱动等场合。器件在结构和热耗散方面做了优化，便于与大型散热器配合以满足高功率要求。
二、主要电气参数（典型值）
- 漏源电压（Vdss）：650 V
- 连续漏极电流（Id）：28 A
- 导通电阻（RDS(on)）：120 mΩ @ Vgs=10 V
- 阈值电压（Vgs(th)）：3.5 V @ ID=250 μA
- 栅极电荷量（Qg）：37.5 nC @ Vgs=10 V
- 输入电容（Ciss）：2.07 nF
- 输出电容（Coss）：120 pF
- 反向传输电容（Crss/Crss）：0.5 pF
- 耗散功率（Pd）：260 W（理论值，实际受散热条件限制）
- 工作温度范围：-55 ℃ ~ +150 ℃
三、器件特点与优势
- 高耐压（650V）设计，适合跨断续高压侧的开关应用。
- TO-247 封装提供良好的热路径与可靠的机械固定，便于与散热器结合降低结温。
- 相对适中的栅极电荷（37.5 nC）在高频切换与开关损耗之间取得平衡，有利于中频率应用。
- 较低的输出电容与反向传输电容，有利于降低开关损耗和回灌干扰。
四、应用建议
- 有源功率因数校正（PFC）整流器的开关管或二极管并联替代方案。
- 中/高压反激、半桥、全桥以及逆变器主开关。
- 工业电机驱动、UPS、电源模块等需要耐压与散热兼顾的场合。
驱动建议：由于 Vgs(th) ≈ 3.5 V 且标称 RDS(on) 在 Vgs=10 V 下给出，建议采用接近 10–12 V 的栅极驱动电压以确保低导通损耗；若工作在高频（≥50 kHz），应关注驱动能力以快速充放电 Qg，降低开关损耗。
五、热管理与可靠性注意
- 标称耗散功率 260 W 为理论极限，实际功率能力受散热器接触、回路热阻和环境温度影响，设计时按结壳热阻和实际散热条件计算安全工作点。
- 推荐采用良好紧固和导热硅片或导热胶以降低结温。
- 进行开关布局时，应注意降低寄生电感、提供合理的回流路径并考虑 RC/TVS 抑制以防止 dv/dt 引起的误动作或过压。
六、选型建议
若设计重点是高耐压与结构可靠性，同时对导通损耗有可接受的余量，NCE65TF130T 提供了平衡的开关性能与热耗散能力。若目标是极低导通电阻以减少静态损耗，可考虑同电压等级下 RDS(on) 更低的器件；若追求高频效率，则需评估更低 Qg 的型号或并联多颗 MOSFET 以分摊开关和导通损耗。
如需基于具体工作点（电压、频率、占空比、散热方案）进行损耗及结温计算，可提供电路参数，我将协助完成热耗与效率估算。
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