WMSIC Electronic Components

NCE NCEP018N85LL

NCE NCEP018N85LL
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Product image

ModelNCEP018N85LL
PackageTOLL
BrandNCE
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

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Technical data

Product details

20 specifications

Core information

Product name
NCE NCEP018N85LL
Type
NCE
Unit
Electronic Component
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
NCE
Electronic Component
NCEP018N85LL
Electronic Component
1
Package
TOLL
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
1.776g
Electronic Component
1
Electronic Component
BM0084341927
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
380W
Electronic Component
Electronic Component
Electronic Component
2000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

NCEP018N85LL 产品概述

一、产品简介

NCEP018N85LL 是新洁能（NCE）推出的一款高性能N沟道场效应晶体管（MOSFET），采用TOLL封装，旨在满足大量电子设备中的高效能开关和线性放大需求。凭借其优越的电气特性和较低的导通电阻，NCEP018N85LL在各种应用场景中表现出色，特别适用于电源管理、电机驱动和信号处理等领域。

二、主要特性

  1. 低导通电阻（R_DS(on)）： NCEP018N85LL具有极低的导通电阻，使其在导通时的功耗显著降低，进而提高了整体系统的能效。这一特性对于动态电源管理和高频开关应用尤为重要，可以有效减少热量产生，提升设备的可靠性。

  2. 高电流承载能力： 本产品支持大电流（最大可达18A）的工作需求，非常适合大功率应用。其高导通能力使得它能够轻松驾驭电机驱动、电源转换等应用中对电流的需求。

  3. 宽电压工作范围： NCEP018N85LL的击穿电压（V_DS）高达85V，能够在多种电压条件下稳定工作，极大地拓宽了其应用范围。它尤其适合于高电压电源电路和电池供电设备。

  4. 封装优势： 采用TOLL（通过孔电镀焊盘）封装设计，NCEP018N85LL具有出色的热性能和机械强度。这种封装形式适应了现代电路设计的需求，易于焊接和安装，有效提高了生产效率。

三、应用领域

NCEP018N85LL广泛应用于以下领域：

  1. 电源管理： 凭借其优异的开关特性，NCEP018N85LL非常适合用于DC-DC转换器、线性稳压器和其他电源管理应用。在高效率电源设计中，它能够帮助减少功耗，同时提高转换效率。

  2. 电机驱动： 在电动机控制和驱动系统中，本产品能够提供高电流和低延迟的开关能力，适用于电动工具、电动车辆以及工业自动化设备等应用。

  3. 消费电子： NCEP018N85LL同样适合用于各类消费电子产品，如LED驱动、快充电源适配器及便携式设备，为其提供高效的电源管理解决方案。

  4. 信号处理： 在射频和信号处理应用中，NCEP018N85LL能够以高速度和低失真处理信号，保证准确的信号传输。

四、技术规格

  • 导通电阻 (R_DS(on))：低于100mΩ（典型值）
  • 最大漏极-源极电压 (V_DS)：85V
  • 最大漏极电流 (I_D)：18A
  • 工作温度范围：-55℃ 到 150℃
  • 封装类型：TOLL

五、结论

综合以上特性，NCEP018N85LL作为一款高性能N沟道MOSFET，不仅能够满足复杂电子系统对性能的高要求，也能在成本控制上提供良好的平衡。新洁能的这一产品，为设计工程师提供了灵活多样的解决方案，是电子行业中的理想选择。无论是在电源管理还是电机驱动领域，NCEP018N85LL凭借其先进的技术和卓越的性能，必将成为众多设计项目的关键组件。

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