WMSIC Electronic Components

NCE NCEP033N10D

ModelNCEP033N10D
PackageTO-263-2
BrandNCE
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
NCE NCEP033N10D
Type
NCE
Unit
Electronic Component
Minimum package
800 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
NCE
Electronic Component
NCEP033N10D
Electronic Component
1
Package
TO-263-2
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
2.068g
Electronic Component
1
Electronic Component
BM0225090907
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
245W
Electronic Component
Electronic Component
Electronic Component
800
Voltage(Vdss)
100V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

NCEP033N10D 产品概述

概要

NCEP033N10D 是由新洁能(NCE)公司生产的一款高性能场效应管(MOSFET),属于N沟道类型,适用于各种高功率电子设备和系统。以下是对此产品的详细介绍。

基础参数

  • 功率(Pd): 245W
    • 这表明该MOSFET能够处理高达245瓦的功率,适用于高能耗应用。
  • 反向传输电容(Crss@Vds): 30pF
    • 低的反向传输电容有助于减少开关时的损耗和噪声。
  • 商品分类: 场效应管(MOSFET)
    • 作为一种场效应管,NCEP033N10D 具有快速开关时间、低导通电阻和高输入阻抗等特点。
  • 导通电阻(RDS(on)@Vgs,Id): 2.7mΩ@10V,80A
    • 低导通电阻意味着在导通状态下,MOSFET会产生较小的热量和能量损失,提高系统效率。
  • 工作温度: -55℃~+175℃
    • 宽泛的工作温度范围使其适用于各种环境条件下的应用。
  • 栅极电荷(Qg@Vgs): 127.7nC@50V
    • 栅极电荷是指在开启MOSFET时需要充电的量,较低的栅极电荷可以提高开关速度。
  • 漏源电压(Vdss): 100V
    • 高的漏源电压耐受性使其能够在高压环境中稳定运行。
  • 类型: 1个N沟道
    • N沟道MOSFET通常用于负载开关和功率调节应用。
  • 输入电容(Ciss@Vds): 7.8105nF@50V
    • 输入电容影响MOSFET的开关速度和驱动需求。
  • 连续漏极电流(Id): 160A
    • 高的连续漏极电流能力使其适用于高当前应用场景。
  • 阈值电压(Vgs(th)@Id): 3.3V@250uA
    • 阈值电压决定了MOSFET开始导通所需的最低栅极电压。

封装和品牌

  • 封装: TO-263-2
    • TO-263-2封装类型提供良好的散热性能和机械强度,适合高功率应用。
  • 品牌: 新洁能(NCE)
    • 新洁能是一家专注于高性能电子元器件的知名品牌,产品广泛应用于工业、汽车和消费电子领域。

应用场景

工业控制和驱动

NCEP033N10D 的高功率和低导通电阻使其非常适合用于工业控制系统、电机驱动、变频器等场景。其宽泛的工作温度范围和高耐压能力进一步增强了其在恶劣环境下的可靠性。

汽车电子

在汽车电子领域,NCEP033N10D 可以用于各种高能耗应用,如电动车驱动、启动系统、电池管理系统等。其高当前能力和低热生成特性有助于提高系统效率和可靠性。

消费电子

虽然主要用于工业和汽车领域,但NCEP033N10D 也可以应用于一些高功率的消费电子设备,如高性能电源供应器、UPS系统、服务器等。其快速开关时间和低能量损耗特性使其成为这些应用中的理想选择。

优势

高效能

  • 低导通电阻(2.7mΩ)和低栅极电荷(127.7nC)确保了高效能转换,减少热量生成。

宽泛工作温度范围

  • 从-55℃到+175℃的工作温度范围,使得NCEP033N10D 适用于各种极端环境条件下的应用。

高耐压能力

  • 100V 的漏源电压耐受性,确保了在高压环境中稳定运行。

快速开关时间

  • 低输入电容和栅极电荷,实现快速开关,适用于需要快速响应的应用。

使用注意事项

热管理

  • 由于高功率应用,需要确保良好的散热措施,以防止过热导致的故障。

驱动要求

  • 低导通电阻和快速开关时间要求驱动电路提供足够的驱动能力,确保MOSFET正常工作。

安全保护

  • 在设计时应考虑过流、过压保护措施,以防止意外情况下对MOSFET造成损害。

总结

NCEP033N10D 是一款高性能N沟道MOSFET,具有出色的导通电阻、快速开关时间和宽泛工作温度范围。它广泛应用于工业控制、汽车电子和消费电子等领域,通过其优异性能提高系统效率和可靠性。通过合理设计和使用,NCEP033N10D 可以满足各种高功率应用的需求。

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