WMSIC Electronic Components

NCE NCEP40PT15D

ModelNCEP40PT15D
PackageTO-263-2
BrandNCE
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

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Technical data

Product details

19 specifications

Core information

Product name
NCE NCEP40PT15D
Type
NCE
Minimum package
800 个

Technical parameters

Electronic Component
Electronic Component
Electronic Component
NCE
Electronic Component
NCEP40PT15D
Electronic Component
1
Package
TO-263-2
Electronic Component
1 P
Electronic Component
MOSFET
Electronic Component
2.347g
Electronic Component
1
Electronic Component
BM0228590735
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
250W
Electronic Component
Electronic Component
Electronic Component
800
Voltage(Vdss)
40V
Capacitor(Ciss)
8.94nF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

NCEP40PT15D 产品概述

一、产品简介

NCEP40PT15D 是新洁能(NCE)推出的一款高电流、低导通电阻的 P 沟道功率 MOSFET,额定漏源电压达 40V,连续漏极电流高达 150A,适合在高电流、高可靠性场景中作为高端开关或电源路径管理器件使用。器件采用 TO-263-2(D2PAK)封装,便于表面贴装并兼顾散热性能。

二、关键参数速览

  • 漏源电压 Vdss:40V
  • 连续漏极电流 Id:150A
  • 导通电阻 RDS(on):2.8 mΩ(在标准驱动电压 |VGS|≈10V 时,测试电流 75A 条件下)
  • 耗散功率 Pd:250W(器件额定值,实际应用需根据封装与环境热阻做降额)
  • 阈值电压 Vgs(th):约 1.2V(典型值)
  • 总栅极电荷 Qg:104.4 nC(需要较强的驱动能力以实现快速开关)
  • 输入电容 Ciss:8.94 nF(@20V)
  • 反向传输电容 Crss:45 pF(@20V)
  • 工作温度范围:-55 ℃ 至 +175 ℃

三、主要特性与优势

  • 低 RDS(on):2.8 mΩ 的低导通电阻在高电流场合可显著降低导通损耗与发热,提升系统效率。
  • 大电流能力:150A 的连续电流能力满足电源分配、电机驱动及汽车电池管理等应用的需求。
  • 宽温度范围与高 Pd:高达 175 ℃ 的工作温度上限及 250W 的耗散能力提升了在严苛环境下的可靠性表现。
  • 驱动特性:较大的 Qg(104.4 nC)和 Ciss 表明器件在开关瞬态有较高的能量需求,适合与专用高电流栅极驱动器配合使用以保证快速切换并控制开关损耗。

四、典型应用场景

  • 电源路径切换与高侧开关(尤其在 12V/24V 汽车和工业供电中)
  • 电池管理与保护电路(高电流放电/充电路径)
  • 功率分配模块、DC-DC 变换器的输入侧或输出侧开关
  • 电机驱动和负载开关场合(需注意开关损耗与散热设计)

五、设计与使用建议

  • 栅极驱动:由于 Qg 与 Ciss 较大,建议使用能够提供足够电流的驱动器(短脉冲大电流)并在栅极串联合适阻值的栅阻以抑制振铃。
  • 开关频率:若用于 PWM 或高频变换,应权衡开关损耗与导通损耗;对高频场合需评估驱动器功率及额外散热。
  • 抗浪涌与过压保护:在电感性负载或车规环境中,建议配合 TVS 二极管、RC 吸收或合适的缓冲电路以抑制 Vds 暴涨。
  • 布局与散热:大铜箔散热铺铜、短而粗的漏极/源回流路径以及在 PCB 下方的热焊盘可显著降低热阻;必要时配合散热器或风冷。
  • 测试条件注意:Pd、Id 等标称值依赖于封装热阻和环境条件,实际设计需参考器件数据手册的 SOA 与热特性曲线做降额设计。

六、封装与可靠性

TO-263-2 封装兼具焊接便利性与较好的散热性能,适合回流焊工艺与自动化贴装。器件在 -55 ℃ 至 +175 ℃ 的额定工作温度范围,使其适用于车规、工业级应用,但在极限温度工作时仍需关注长期可靠性及热循环影响。

七、结论

NCEP40PT15D 以其低导通电阻、高电流能力和宽温工作范围,适合用于要求高效率与高可靠性的电源开关与功率分配应用。设计时应重点关注栅极驱动能力、散热处理以及瞬态抑制,以发挥器件在高负载场景下的性能优势。欲获得更详尽的电气特性曲线与封装热阻参数,建议参考 NCE 官方数据手册。

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