WMSIC Electronic Components

NCE NCEP40T20A

ModelNCEP40T20A
PackageTO-220
BrandNCE
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

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Technical data

Product details

20 specifications

Core information

Product name
NCE NCEP40T20A
Type
NCE
Unit
Electronic Component
Minimum package
1000 管

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
NCE
Electronic Component
NCEP40T20A
Electronic Component
1
Package
TO-220
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
2.716g
Electronic Component
1
Electronic Component
BM0228686493
Operating Temperature
55℃~+175℃
Power Dissipation(Pd)
270W
Electronic Component
Electronic Component
Electronic Component
1000
Voltage(Vdss)
40V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

NCEP40T20A 产品概述

NCEP40T20A 是新洁能(NCE)推出的一款高性能 N 沟道功率 MOSFET,封装为 TO-220,面向高电流、低导通损耗的开关与线性功率应用。该器件在 40V 漏源耐压下提供极低的导通电阻与高连续电流能力,适合需要大电流传导同时兼顾开关性能的电源与电机驱动场合。

一、主要参数一览

  • 型号:NCEP40T20A(N 沟道)
  • 漏源电压 Vdss:40 V
  • 连续漏极电流 Id:200 A
  • 导通电阻 RDS(on):1.3 mΩ @ VGS=10 V,ID=100 A
  • 最大耗散功率 Pd:270 W(取决于散热条件)
  • 阈值电压 VGS(th):3.8 V
  • 总栅极电荷 Qg:91 nC @ VGS=20 V
  • 输入电容 Ciss:5.8346 nF @ 20 V
  • 反向传输电容 Crss:70 pF
  • 工作结温范围:-55 ℃ ~ +175 ℃
  • 品牌/封装:NCE / TO-220

二、器件特点与优势

  • 极低的导通电阻(1.3 mΩ)在大电流条件下可显著降低导通损耗和发热,适合需高效率的电源级别或直流电流路径。
  • 高额定连续电流(200 A)结合 TO-220 适配外部散热器使用,适合中等功率但需要高瞬时电流的场景。
  • 宽工作温度与高耐热性(最高结温可达 175 ℃)提高了可靠性,适应苛刻环境和长寿命设计。
  • 较大的总栅极电荷(91 nC)意味着在高频开关时栅极驱动能量需充分考虑,但同时表明器件适合中低至中等开关频率下以降低开关损耗。

三、典型应用场景

  • DC-DC 降压/同步整流器(尤其需要低 RDS(on) 的输出级)
  • 汽车与车载电源(12V/24V 系统的功率开关,需配合浪涌抑制)
  • 无刷电机驱动和电动工具驱动级
  • 伺服驱动/电源管理、热插拔与负载开关
  • UPS、逆变器及高电流击穿测试平台

四、设计建议与布局要点

  • 栅极驱动:为达到规格的低 RDS(on),建议采用 10 V 以上的栅极驱动电压;由于 Qg=91 nC,驱动器应提供足够电流以保证快速切换并减少开关损耗,适当串联栅极电阻(10–47 Ω)以抑制振铃。
  • 热管理:TO-220 需配合合适散热片或冷却方式使用,270 W 的 Pd 仅在理想散热条件下可达。在 PCB 设计上使用大面积铜箔、多层散热通孔以降低结到环境的热阻。
  • 布局与寄生参数:Ciss≈5.8 nF 与 Crss≈70 pF 在开关瞬态会引起显著电压/电流应答,建议将 MOSFET、驱动器和回流电容布局紧凑以降低感性环路。同时注意 Miller 效应对开关过渡的影响。
  • 保护措施:在感性负载应用中应配置合适的 TVS、RC 吸收或续流二极管以抑制瞬态过压;考虑器件阈值较高(VGS(th)=3.8 V),避免在半开状态长时间工作导致热应力。

五、选型注意事项

  • 若工作在高频(>100 kHz)场景,应权衡栅极驱动能量与开关损耗,可能需要选择总栅电荷更低的器件或并联多个器件分担电流与降低 Qg 压力。
  • 在汽车或有较大浪涌的环境,40 V 的 Vdss 需配合足够的浪涌抑制裕度与器件的脉冲能量能力评估。
  • 对于极高的瞬时电流或并联使用,应注意片间一致性与热均衡设计。

总结:NCEP40T20A 以其极低 RDS(on) 与高电流能力在中低电压、大电流应用中具备明显优势。合理的热设计与强驱动配置能发挥其最佳性能,是同步整流、功率开关与电机驱动等场合的理想候选器件。

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