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NCE XJNG2103
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
20
specifications
Core information
- Product name
- NCE XJNG2103
- Type
- NCE
- Unit
- Electronic Component
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- Electronic Component
- NCE
- Electronic Component
- XJNG2103
- Electronic Component
- 1
- Package
- SOP-8
- Electronic Component
- (UVP)
- Electronic Component
- Gate Driver IC
- Electronic Component
- 0.16g
- Electronic Component
- 1
- Electronic Component
- BM0225201425
- Operating Temperature
- 40℃~+125℃
- Operating Voltage
- 9V~20V
- Load Type
- MOSFET
- Driver
- Electronic Component
- Current(IOH)
- 1A
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
XJNG2103 半桥MOSFET栅极驱动器产品概述
一、产品定位与核心属性
XJNG2103是新洁能（NCE）推出的2通道半桥栅极驱动器，专为驱动功率MOSFET设计，集成度高、性能稳定，可满足工业级及中高频应用场景的栅极驱动需求。其核心属性包括：支持半桥拓扑结构、2路独立驱动通道、宽输入电压范围、快速开关时序、低静态功耗及宽温度工作范围，封装采用通用SOP-8，适配主流贴片工艺。
二、关键技术参数详解
1. 电源与静态特性
- 工作电压范围：9V~20V，覆盖12V、15V、18V等常见栅极驱动电源，无需额外复杂电源转换；
- 静态电流（Iq）：典型值160μA，待机或低负载状态下功耗极低，适合对功耗敏感的便携式/电池供电系统。
2. 开关时序性能
- 上升时间（tr）：50ns（典型值），栅极电压快速上升，降低MOSFET导通损耗；
- 下降时间（tf）：40ns（典型值），栅极电压快速关断，减少开关过渡损耗；
- 传播延迟：低侧上升延迟（tpLH）150ns、低侧下降延迟（tpHL）140ns，高低侧延迟匹配度高，提升半桥拓扑同步精度，避免桥臂直通风险。
3. 温度与可靠性
- 工作温度范围：-40℃~+125℃，符合工业级环境要求，可稳定工作于极端高低温场景（如户外光伏逆变器、车载辅助系统）；
- 抗干扰设计：内置ESD保护及噪声抑制电路，提升电磁复杂环境下的系统可靠性。
三、封装与典型应用场景
1. 封装规格
XJNG2103采用SOP-8贴片封装，尺寸紧凑（约5.2mm×6.0mm），适配标准贴片焊接设备，便于批量生产；引脚功能清晰：2路输入（IN1/IN2）、2路输出（HO/LO）、电源端（VCC/VSS）、高侧浮动电源（VB/VS），可直接匹配半桥拓扑的功率MOSFET栅极。
2. 典型应用
- 电机驱动：BLDC无刷直流电机、伺服电机栅极驱动（如工业机器人、电动工具）；
- 电源转换：DC-DC升压/降压转换器、逆变器（如光伏微型逆变器、充电桩DC/DC模块）；
- 工业控制：PLC输出级、伺服驱动器栅极驱动；
- 新能源领域：电动汽车辅助系统（空调、转向）、储能系统功率变换。
四、性能优势总结
XJNG2103相比同类产品，具备以下突出优势：
- 低功耗待机：160μA静态电流远低于竞品，适合长期待机的低功耗系统；
- 高频适配：50ns上升/40ns下降时间支持100kHz以上高频开关，提升功率密度；
- 宽温可靠性：-40~125℃工业级温宽，覆盖绝大多数工业/户外场景；
- 集成度高：2通道半桥驱动集成于SOP-8，减少外部元件，降低系统成本与体积；
- 安全同步：高低侧传播延迟匹配度高，有效避免桥臂直通，提升系统安全性。
该产品以高性价比、稳定可靠的特性，成为工业控制、新能源等领域半桥MOSFET驱动的优选方案。
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