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PANJIT PJA138K_R1_00001
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- PANJIT PJA138K_R1_00001
- Type
- PANJIT
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- PANJIT
- Electronic Component
- PJA138K_R1_00001
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.029g
- Electronic Component
- 1
- Electronic Component
- BM0227309734
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 500mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 50V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
PJA138K_R1_00001 产品概述
一、产品简介
PJA138K_R1_00001 是 PANJIT（强茂）推出的一款小信号 N 沟道场效应管（MOSFET），封装为 SOT-23，适用于低功耗开关和驱动场合。器件工作温度范围宽（-55℃ ~ +150℃），单片数量为 1 个 N 沟道晶体管，兼顾体积小、控制简单和开关性能稳定的需求。
二、主要性能参数
- 漏源耐压（Vdss）：50 V
- 连续漏极电流（Id）：500 mA
- 导通电阻（RDS(on)）：1.6 Ω @ Vgs = 10 V
- 阈值电压（Vgs(th)）：1.5 V @ IDSS 250 μA（注：按厂商测量条件）
- 输入电容（Ciss）：50 pF
- 输出电容（Coss）：20 pF
- 反向传输电容（Crss / Crss）：5 pF
- 总栅极电荷（Qg）：1 nC @ Vgs = 4.5 V
- 耗散功率（Pd）：500 mW
以上参数反映了器件在小信号和低功率开关场景下的典型电气特性，低输入/输出电容与较小的栅极电荷有利于提高开关速度并降低驱动功率。
三、典型应用场景
- 便携式电源与电池管理中的低侧开关或负载切换
- 小型电机驱动、继电器替代与电源路径控制
- 信号切换、保护电路（如反向保护、负载断开）
- 工业和消费电子中对体积和成本敏感的驱动场景
四、封装与热管理
SOT-23 小封装适合集成到空间受限的电路板上。器件额定耗散功率为 500 mW，实际热性能受 PCB 铜箔面积与环境温度影响显著。在闭合或高占空比工作时，应通过增加铜箔散热区或并联器件（若电流更大）来保证结温不超标。
五、使用建议与注意事项
- RDS(on) 给定值在 Vgs=10V 条件下测得，若在 3.3 V 或更低逻辑电压下驱动，导通电阻会显著变大，应评估损耗和发热。
- 低 Ciss/Coss/Crss 与 1 nC 的 Qg 有利于快速切换和低驱动电流，但若用于高频强驱动场合，仍需关注开关损耗与电磁干扰。
- 在高温或高电流应用中，注意器件功耗和结温限制，必要时采取散热或降额设计。
- 建议在实际电路中进行热仿真与实验验证，以确认长期可靠性。
六、优势总结
PJA138K_R1_00001 以其 50 V 耐压、SOT-23 小封装、低电容和较小栅电荷，适合体积受限且需快速开关的低功耗应用。PANJIT（强茂）品牌保证了器件的一致性与可靠性，是便携设备、电源管理及一般开关控制的实用选择。
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