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PANJIT PJA3440_R1_005A2
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- PANJIT PJA3440_R1_005A2
- Type
- PANJIT
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- PANJIT
- Electronic Component
- PJA3440_R1_005A2
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.033g
- Electronic Component
- 1
- Electronic Component
- BM0263665350
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 1.25W
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
- Voltage(Vdss)
- 40V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
PJA3440_R1_005A2 产品概述
一、概览
PJA3440_R1_005A2 是 PANJIT（强茂）推出的一款低压沟槽工艺 N 沟道场效应管，额定漏源电压 40V，适用于开关负载、PWM 驱动及固态继电器等场合。器件采用 SOT-23 小封装，体积小、效率高，满足现代便携和板级功率管理需求。
二、主要电气参数
- 类型：N 沟道 MOSFET
- Vdss：40V
- 连续漏极电流 Id：4.3A
- 导通电阻 RDS(on)：44mΩ @ Vgs=4.5V；35mΩ @ Vgs=10V
- 阈值电压 Vgs(th)：1.5V
- 总耗散功率 Pd：1.25W
- 栅极电荷 Qg：4.8nC @ 4.5V
- 输入电容 Ciss：410pF；输出电容 Coss：50pF；反向传输电容 Crss：30pF
- 工作温度范围：-55°C ~ +150°C
三、性能亮点
- 低 RDS(on) 与较小的栅极电荷共同保证了开关损耗低、导通损耗小，适用于高频 PWM 切换场景。
- 先进沟槽工艺提高了导通性能与热稳定性，使器件在小封装下仍能承受较大电流。
- 小封装（SOT-23）便于表面贴装，利于占板面积受限的设计。
四、适用场景
- 开关电源次级或低压侧开关管
- 电机驱动与 PWM 调速控制
- 固态继电器（SSR）与负载开关
- 电池保护、电源管理与便携设备电路
五、可靠性与合规
器件为无铅产品，符合欧盟 RoHS 2011/65/EU 指令，并采用符合 IEC61249 标准的绿色（无卤素）模塑化合物，适合对环保与可靠性有要求的应用。额定工作温度宽，适应工业级环境。
六、设计注意事项
- 在高电流或高频应用中注意封装散热限制，必要时通过 PCB 铜箔散热或并联使用降低热阻。
- 栅极驱动电压直接影响 RDS(on)，若系统允许，使用更高 Vgs（接近 10V）可显著降低导通电阻与损耗。
- 注意 Crss 对开关过冲与 EMI 的影响，必要时在栅极或漏极侧增加吸收或缓冲元件以抑制振铃。
总结：PJA3440_R1_005A2 在 40V 级别提供了低导通电阻与较小栅极电荷的平衡方案，适合中低压、高频开关与板级功率管理应用，且具备良好的环保与可靠性特性。若需原理图典型连接或封装引脚图，可进一步提供电路建议与 PCB 布局要点。
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