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PANJIT 1N5235B_AY_10001
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- PANJIT 1N5235B_AY_10001
- Type
- PANJIT
- Minimum package
- 5000 盒
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- PANJIT
- Electronic Component
- 1N5235B_AY_10001
- Electronic Component
- 1
- Package
- DO-35
- Electronic Component
- Zener Diode
- Electronic Component
- 0.16g
- Electronic Component
- 1
- (Zzk)
- 750Ω
- (Zzt)
- 5Ω
- Electronic Component
- BM0264887160
- Diode
- 1
- Current(Ir)
- 3uA
- Power Dissipation(Pd)
- 500mW
- Electronic Component
- 6.46V~7.14V
- Electronic Component
- Electronic Component
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
1N5235B_AY_10001 产品概述
一、产品简介
1N5235B_AY_10001 为 PANJIT（强茂）出品的一款独立式稳压二极管，标称稳压值 6.8V，属于小功率 Zener 基准元件，常用于电压基准、过压保护与低功耗电源稳压场合。封装为 DO-35（玻封轴向引线），适合通孔焊接与手工样板开发。
二、主要参数
- 稳压值（标称）：6.8V
- 稳压值范围：6.46V ~ 7.14V（±5%）
- 反向电流 Ir：3 μA
- 最大耗散功率 Pd：500 mW
- 阻抗 Zzt：5 Ω
- 阻抗 Zzk：750 Ω
三、电气特性解读
Zener 阻抗 Zzt = 5 Ω 表明在规定测试电流下稳压能力良好，输出阻抗低，适合要求较低纹波的基准场合；Zzk = 750 Ω 表示在击穿拐点附近低电流区域有较陡的特性，需要注意在微安级工作点时电压不稳定。Ir = 3 μA 的低反向漏电利于低功耗电路和高阻抗参考使用。
四、功耗与热管理
标称耗散功率 500 mW 是在限定环境温度下的最大耗散。理论最大电流约为 0.5W/6.8V ≈ 73 mA，但实际使用应留出裕度并考虑温升与散热，推荐连续工作电流常见控制在 10–30 mA 区间，必要时加装散热或减小占空比并进行热降额。
五、封装与机械特性
DO-35 玻封轴向封装耐温性能好、引线易焊接，适用于直插电路板与样机调试。AY 后缀通常与厂商包装与批次管理相关，采购时可向供应商确认具体包装形式（散装、带卷或管装）。
六、典型应用
- 低功耗参考电压源与基准电路
- 过压保护与输入抑制
- 小信号放大器的偏置稳定
- 电池管理与便携设备低电压监测
七、选型与替代建议
选择时注意稳压范围与系统允许误差匹配（本件为 ±5%）。若需更精确参考，可并联低噪声放大或选用精密基准源。替代件可选取同类 6.8V、0.5W 等级的 Zener 二极管，关注 Zzt、Ir 与封装一致性。
八、使用与可靠性注意事项
- 焊接温度与时间应按玻封器件规范控制，避免热应力导致密封破坏。
- 储存避免潮湿与机械冲击，开卷后建议在合理期限内使用。
- 设计电路时应考虑浪涌电流与瞬态能量吸收，必要时加限流电阻与旁路电容以稳定输出。
以上为 1N5235B_AY_10001 的产品要点与工程应用建议，适合快速评估与电路设计参考。如需更详尽的测试条件曲线或温度降额表，可提供具体应用场景以便查阅厂商完整数据手册。
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