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PANJIT MMBT3906_R1_00301
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- PANJIT MMBT3906_R1_00301
- Type
- PANJIT
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- PANJIT
- Electronic Component
- MMBT3906_R1_00301
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 PNP
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.031g
- Electronic Component
- 1
- Electronic Component
- BM0264484554
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- PNP
- Frequency(f T)
- 250MHz
- Power Dissipation(Pd)
- 330mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBT3906_R1_00301 产品概述
一、主要参数
MMBT3906_R1_00301 为 PANJIT（强茂）出品的通用型 PNP 晶体管，封装为 SOT-23，单只器件。关键参数如下：集电极电流 Ic=200mA；集–射极击穿电压 Vceo=40V；耗散功率 Pd=330mW（封装及环境相关）；直流电流增益 hFE≈300（小电流区高增益）；特征频率 fT≈250MHz；集–射极饱和电压 VCE(sat) 在不同偏置下典型约250mV，最大可达400mV；射–基极反向击穿电压 Vebo=5V；工作温度范围 -55℃～+150℃。包装数量：1 个/件。
二、主要特性与优势
- 高增益：hFE≈300，有利于低电流放大与高增益级设计。
- 宽带宽：fT≈250MHz，适合小信号高频放大和快速切换应用。
- 低饱和压：在合适偏置下 VCE(sat) 低至约250mV，开关损耗小。
- 宽温度范围与可靠性：适合工业级温度要求。
- SOT-23 小封装，便于表贴、高密度 PCB 布局。
三、典型应用场景
- 通用开关与低功率开关管（如高侧 PNP 开关）
- 小信号放大器、前置放大与射频前端（几十 MHz 范围内）
- 电平移位、驱动小继电器或 LED（注意电流与耗散限制）
- 作为电流镜、偏置网络中的有源器件
四、使用建议与注意事项
- 虽然 Ic 峰值可达 200mA，但受限于 SOT-23 封装的热能力，持续工作请以 Pd=330mW 为限，并采取合理的 PCB 散热（加大铜箔面积、热通孔）。
- VCE(sat) 随偏置和电流变化，设计时按最大 400mV 保证电路余量；低电流工作可期待约250mV 的典型值。
- 严禁将基极对射极反向偏压超过 Vebo=5V，以免损坏结结构。
- 在高频应用中注意寄生电容与布局，尽量缩短走线并做好地平面隔离。
五、封装与可靠性
SOT-23 小型封装适合自动贴装生产，单只器件便于样机调试。PANJIT 品牌支持工业级品质控制，工作温度 -55℃～+150℃，适合多种工业与民用场景。采购时注意核对批号与参数一致性，量产建议做必要的温升与寿命验证。
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