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PANJIT P4FL30A_R1_00001
Configuration
1 options
Configuration
24+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- PANJIT P4FL30A_R1_00001
- Type
- PANJIT
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- PANJIT
- Electronic Component
- P4FL30A_R1_00001
- Electronic Component
- 1
- Package
- SOD-123FL
- Type
- TVS
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.035g
- Electronic Component
- 1
- Electronic Component
- BM0259717229
- Operating Temperature
- 55℃~+150℃
- Voltage
- 48.4V
- Current(Ir)
- 100nA
- Voltage(VBR)
- 36.8V
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
P4FL30A_R1_00001 产品概述
一、产品简介
P4FL30A_R1_00001 是强茂（PANJIT）出品的一款单向瞬态电压抑制器（TVS），用于电路的静电放电（ESD）和浪涌保护。器件采用 SOD-123FL 小型封装，专为空间受限的消费电子、通讯与车载外围电路提供可靠的过压防护。
二、主要电气参数
- 反向截止电压（Vrwm）：30 V
- 钳位电压（Vc）：48.4 V（典型，Ipp 条件下）
- 峰值脉冲电流（Ipp）：8.3 A @ 10/1000 μs 波形
- 峰值脉冲功率（Ppp）：400 W @ 10/1000 μs
- 击穿电压（Vbr）：36.8 V
- 反向漏电流（Ir）：100 nA（常温、标称 Vrwm 条件）
- 工作温度范围：-55 ℃ ~ +150 ℃
三、特点与优势
- 高能量吸收能力：在 10/1000 μs 浪涌条件下具备 400 W 的瞬态功率处理能力，适合雷击及开关干扰情形。
- 低漏电流：典型 100 nA 的漏电特性，适用于对静态功耗敏感的系统。
- 小型封装：SOD-123FL 外形便于高速贴片生产，适合空间受限设计。
- 宽温耐受：-55 ℃ 到 +150 ℃ 的工作温度覆盖工业级应用要求。
四、典型应用
- USB、HDMI、以太网接口的浪涌与静电保护
- 汽车电子外围模块（传感器线缆、控制单元）
- 电源输入端和通信总线保护
- 消费类电子（电视、机顶盒、路由器等）
五、使用建议与注意事项
- 推荐在靠近被保护端口的线路处布局，以缩短保护器件到敏感节点的轨迹。
- 在高能量冲击路径上，配合合适的串联阻抗或熔断器可提高系统整体可靠性。
- 注意焊接温度曲线与 SOD-123FL 封装工艺要求，避免超温影响封装性能。
- 设计时应兼顾钳位电压与被保护器件耐压，确保钳位后电压不超过器件极限。
P4FL30A_R1_00001 以其优良的瞬态吸收能力、低漏电和小尺寸封装，为各种需抗静电与抗浪涌的电路提供经济且可靠的保护解决方案。若需更详细的电气特性曲线和封装尺寸图，可参考强茂官方数据手册或联系供应商获取样片验证。
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