WMSIC Electronic Components

PANJIT MMBD7000_R1_00301

ModelMMBD7000_R1_00301
PackageSOT-23
BrandPANJIT
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
PANJIT MMBD7000_R1_00301
Type
PANJIT
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
PANJIT
Electronic Component
MMBD7000_R1_00301
Electronic Component
1
Package
SOT-23
Electronic Component
Switch Diode
Electronic Component
0.03g
Electronic Component
1
Electronic Component
BM0263665352
Current
200mA
Diode
1
Current(Ir)
3uA
(Vf)
1.1V@100mA
Power Dissipation(Pd)
225mW
Electronic Component
55℃~+150℃
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

MMBD7000_R1_00301 产品概述

一、产品简介

MMBD7000_R1_00301 是强茂(PANJIT)推出的一款高速反向恢复二极管对,采用 SOT-23 表面贴装封装,内部为隔离的串联连接二极管对(1 对串联式)。器件为无铅绿色模塑材料,符合 RoHS 2.0 与 IEC 61249 标准,适配自动贴片与自动焊接生产线,适用于对体积、速度和可靠性有较高要求的小功率开关和保护电路。

二、主要电气参数

  • 耗散功率 (Pd):225 mW
  • 整流电流:200 mA(平均)
  • 直流反向耐压 (Vr):100 V
  • 正向压降 (Vf):1.1 V @ 100 mA
  • 非重复峰值浪涌电流 (Ifsm):4 A
  • 反向电流 (Ir):≈3 μA
  • 反向恢复时间 (Trr):典型值可低至 <2 ns,规格上限为 4 ns
  • 工作结温范围:-55 ℃ ~ +150 ℃

三、性能特点

  • 极快反向恢复特性,Trr 典型值低(≤2 ns),有利于高频开关场合减少反向电荷与损耗。
  • 串联隔离结构可直接用于电压加倍、两级整流或需要两只二极管串联以提高耐压的场合。
  • SOT-23 小封装,体积小、重量轻,便于高密度电路设计与自动化装配。
  • 低反向电流与较高的非重复浪涌承受能力,兼顾静态漏电与瞬态保护能力。
  • 绿色无铅材料,符合环保与客户合规要求。

四、典型应用场景

  • 高频开关电源(SMPS)中的整流与回复二极管。
  • DC-DC 转换器输出整流或钳位。
  • 小功率电源模块、便携设备电源路径选择。
  • 信号链路保护、反向极性保护及瞬态浪涌吸收(配合限流元件)。
  • 需要两只二极管串联以提升耐压的电路设计。

五、封装与布局建议

  • SOT-23 封装适合自动贴装;焊盘设计应保证良好焊接与热传导。
  • 尽量缩短高频开关节点的走线,减小回路面积以降低 EMI 与振铃。
  • 在快速开关场合建议在近旁配置旁路电容与必要的 RC/RC+R 抑制网络,以控制反向恢复引起的尖峰电压。
  • 为降低结温,应在 PCB 上配置适当铜箔散热区域并考虑对 Pd 进行散热计算与热降额。

六、热设计与可靠性建议

  • 器件Pd 为 225 mW,属于小功率级别,持续大电流工作时需考虑热降额。
  • 在高环境温度或连续 200 mA 工作条件下,建议进行热仿真并增大 PCB 散热面积;必要时通过并联器件或升规格器件分担负载。
  • 长期工作应注意结温控制在安全范围内(-55 ℃ ~ +150 ℃),并遵循焊接温度曲线以保证可靠性。

七、注意事项与选型建议

  • 若电路中允许更高的正向压降或需要更强的持续电流承载能力,可考虑更高 Pd 或更大封装的器件;本器件适合体积受限且需高速恢复的场合。
  • 反向恢复非常快会增加瞬态 EMI,设计中应配合良好布局与抑制措施。
  • 选型时请参考完整数据手册以获取更详细的温度依赖特性曲线、极限参数及封装引脚图。

如需针对具体电路(例如某型号开关电源或接口保护电路)进行仿真或热设计建议,我可以根据电路条件给出更具体的布局与元件配合方案。

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