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PANJIT MMBTA05_R1_00001
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- PANJIT MMBTA05_R1_00001
- Type
- PANJIT
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- PANJIT
- Electronic Component
- MMBTA05_R1_00001
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Electronic Component
- BM0264356041
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- NPN
- Frequency(f T)
- 100MHz
- Power Dissipation(Pd)
- 225mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBTA05_R1_00001 产品概述
一、产品简介
MMBTA05_R1_00001 是强茂（PANJIT）推出的一款小型封装 NPN 晶体管，SOT-23 封装、工作温度范围宽（-55℃ 至 +150℃），适用于低功耗开关与小信号放大场合。器件具有较高的频率特性和良好的电流增益，便于在空间受限的电路中实现可靠驱动与放大功能。
二、主要参数与特性
- 晶体管类型：NPN（BJT）
- 集电极电流 Ic：500 mA（最大）
- 集-射击穿电压 Vceo：60 V
- 最大耗散功率 Pd：225 mW
- 直流电流增益 hFE：≈100（典型）
- 特征频率 fT：≈100 MHz（典型）
- 集电极截止电流 Icbo：≈100 nA
- 集射极饱和电压 VCE(sat)：约 250 mV（低饱和电压，利于驱动负载）
- 射基极击穿电压 Vebo：4 V（注意反向基-射极电压限制）
- 封装：SOT-23，单只包装（数量：1）
三、典型应用
- 低功耗开关与驱动电路（如继电器/小电流继电器驱动）
- 小信号放大器和级间放大（音频前级、传感器信号调理）
- 高频小信号处理（通信、振荡器、混频器的前端）
- 便携式与空间受限电子设备
四、热与封装注意事项
SOT-23 的额定耗散功率较低（225 mW），在实际应用中应通过合理的 PCB 布局提升散热能力：扩大焊盘铜面积、加热散热过孔或将热量分散到接地平面。同时需保证工作时的集电极电流与电压在安全区内，避免长期在额定极限附近运行造成热失效。
五、使用建议与可靠性
为确保稳健工作，建议在开关场合加入基极限流电阻以控制基极电流并减少饱和恢复时间；避免基-射极反向电压超过 4 V；注意器件在高温条件下的降额。选型时如需更高功耗或更大电流，应选择更大封装或更高 Pd 的器件。
六、封装与订购信息
品牌：PANJIT（强茂）；封装：SOT-23；型号：MMBTA05_R1_00001。适用于需要小体积、高频特性且不超高功耗的通用 NPN 应用场景。若需样品或批量采购，请参考供应商数据手册以确认详细极限值与测试条件。
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