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PANJIT ES1G_R1_00101
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- PANJIT ES1G_R1_00101
- Type
- PANJIT
- Minimum package
- 1800 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- PANJIT
- Electronic Component
- ES1G_R1_00101
- Electronic Component
- 1
- Package
- SMA
- Electronic Component
- Fast Recovery / High-Efficiency Diode
- Electronic Component
- 0.097g
- Electronic Component
- 1
- Electronic Component
- BM0257662792
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 1uA@400V
- (Vf)
- 1.25V@1A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 1800
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
ES1G_R1_00101 产品概述
一、产品简介
ES1G_R1_00101 为强茂（PANJIT）出品的独立式快恢复/高效率二极管，封装为 SMA。该器件针对开关电源和整流应用优化，提供良好的开关速度与低正向压降，适用于中等频率电源与保护电路。
二、主要参数
- 型号：ES1G_R1_00101
- 封装：SMA（独立式）
- 正向压降：Vf = 1.25V @ IF = 1A
- 直流反向耐压：VR = 400V
- 整流电流：IF = 1A（连续）
- 非重复峰值浪涌电流：IFSM = 30A
- 反向电流：IR = 1µA @ VR = 400V
- 反向恢复时间：Trr = 35ns
- 工作结温范围：Tj = -55℃ ~ +150℃
三、产品特性与优势
- 低正向压降（1.25V@1A）降低导通损耗，有利于提升系统效率并减小热量产生。
- 快恢复特性（Trr = 35ns）有效降低开关损耗与开关尖峰，适合中高频整流与自由轮回场合。
- 低反向漏电（1µA@400V）适用于高压侧低待机功耗设计，减少静态损耗。
- SMA 封装便于点对点安装与更换，适配多种 PCB 布局。
四、典型应用
- 开关电源整流（中小功率）
- 适配器/充电器输出整流与反接保护
- 电机驱动的自由轮回二极管
- 太阳能逆变器及微型逆变器辅助整流
- 功率因数校正（PFC）与中间回路保护
五、热管理与可靠性
即使工作结温可达 +150℃，长期可靠运行仍建议在设计时考虑热沉与散热铜箔。SMA 封装热阻相对较高，应通过扩大焊盘铜面积、加装底层散热通孔或局部散热片来降低结温。焊接工艺应遵循厂商温度曲线，避免过热造成封装损伤。
六、设计注意事项
- 在高频开关应用中，尽管 Trr 为 35ns，仍需评估反向恢复产生的峰值电流与能量，必要时配合 RC/RCD 吸收或缓冲网络。
- 浪涌流 Ifsm = 30A 为单次峰值能力，设计中应避免频繁超额冲击。
- 布局时保持正负极走线短且粗，减小寄生电感以降低尖峰电压。
- 对于高可靠性或长寿命场景，建议预留余量并进行温度应力验证和实测寿命评估。
如需封装尺寸、伏安曲线及封装管脚图纸或样品信息，可提供进一步支持。
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