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PANJIT S100W_R1_00001
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- PANJIT S100W_R1_00001
- Type
- PANJIT
- Minimum package
- 1800 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- PANJIT
- Electronic Component
- S100W_R1_00001
- Electronic Component
- 1
- Package
- SMA
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.1g
- Electronic Component
- 1
- Electronic Component
- BM0264356035
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 500uA@100V
- (Vf)
- 850mV@1A
- Electronic Component
- 55℃~+150℃
- Electronic Component
- Electronic Component
- Electronic Component
- 1800
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
S100W_R1_00001 产品概述
一、产品简介
S100W_R1_00001 为 PANJIT（强茂）出品的独立式肖特基整流二极管，额定反向耐压 100V，平均整流电流 1A，采用 SMA 封装（SMA/W 兼容）。器件以低正向压降与快速开关特性为主要卖点，适用于空间受限且要求低损耗的整流与保护场合。
二、主要电气参数与性能
- 二极管配置：1 个独立式
- 正向压降（Vf）：0.85V @ 1A
- 直流反向耐压（Vr）：100V
- 平均整流电流：1A
- 反向电流（Ir）：500μA @ 100V（随温度升高显著增加）
- 工作结温：-55℃ ～ +150℃
- 非重复峰值浪涌电流（Ifsm）：30A（冲击条件请参照厂家资料）
该器件在 1A 级别下表现出较低的导通损耗，适合替代普通硅整流器以减少功率损耗并提高转换效率。但在高压条件下反向漏电相对较高，需在设计时考虑漏电随温度的增加。
三、封装与热特性
SMA 小型表面封装，利于自动贴片与回流焊工艺。尽管单只器件额定电流为 1A，但热阻与散热路径受限时需进行功率及温升计算；在连续工作或高纹波电流条件下建议增加散热铜箔面积或并联器件以降低结温，保障长期可靠性。
四、典型应用场景
- 开关电源次级整流与续流二极管
- 逆向保护与输入极性保护（低压直流系统）
- DC-DC 转换器、汽车电子（12V/24V 系统）
- 太阳能微逆、充电器及便携设备电源管理
100V 的耐压等级适配 12V/24V 以及部分 48V 系统，肖特基特性有利于提高效率与降低发热。
五、使用建议与注意事项
- 设计时按实际工作电流进行结温估算并留有裕度，注意反向漏电随结温上升会迅速增长。
- Ifsm 为非重复峰值浪涌能力，常见测试条件不同，实际应用中应避免反复大冲击。
- 回流焊请遵循厂方推荐温度曲线，避免长时间高温导致封装或焊点应力。
- 对于高可靠性需求，请在下游加入适当保险与浪涌抑制元件。
六、质量与可靠性
PANJIT 为成熟的半导体制造商，常见质量控制与可靠性验证（如温度循环、高温储存、湿热试验）均有对应标准。为获得最佳一致性，请向供应商索取原厂数据表、批次报告及储存/包装说明。
七、选型与替代
在挑选时关注正向压降、反向漏电与峰值浪涌能力的权衡；若系统对反向漏电敏感可考虑更高等级或带有更低 Ir 的型号；若需更高电流能力可采用更大封装或并联方案。实际应用前建议在目标工作条件下进行仿真与样机验证。
如需详细封装尺寸、温度特性曲线或典型应用电路图，请告知，我可为您查找并整理对应的原厂数据表要点。
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