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PANJIT 2N7002K_R1_00001
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- PANJIT 2N7002K_R1_00001
- Type
- PANJIT
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- PANJIT
- Electronic Component
- 2N7002K_R1_00001
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.047g
- Electronic Component
- 1
- Electronic Component
- BM0123310711
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 350mW
- Gate Voltage(Vgs)
- ±20V
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
2N7002K_R1_00001 产品概述
一、产品基本信息
2N7002K_R1_00001 是一款高性能的 N 沟道场效应管（MOSFET），拥有350mW的额定功率，支持最高60V的漏源电压和300mA的漏电流。这款产品由知名品牌 PANJIT（强茂）制造，封装形式为SOT-23（SOT-23-3），其小型的封装设计使得其在紧凑的电路板上也能轻松实现布线，无论是低功耗应用还是智能设备，这款MOSFET都是可靠且高效的选择。
二、产品特性
电气特性：
- 漏源电压（V_DS）：最高可达60V，适用于多种需要电压保护的应用。
- 漏电流（I_D）：最大值为300mA，能够满足大多数中小功率设备的需求。
- 耗散功率（P_D）：350mW的低功率耗散特性，使其在低功耗应用中表现尤为出色。
封装形式：
- SOT-23封装小巧，体积小，有效节省电路板空间，适合于高密度布局的消费电子和工业设备中。
工作温度范围：
- 该MOSFET工作温度范围广泛，能够在苛刻环境中正常工作，确保设备的稳定性和可靠性。
开关速度：
- 作为MOSFET，其开关速度相较于传统的BJT（双极性晶体管）更加迅速，能够提高电路的响应速度，使其在高频应用中表现良好。
三、应用场景
2N7002K_R1_00001 的多功能特性使其能够应用于广泛的领域，包括：
消费电子：
- 电子玩具、便携式音响和充电器等小型设备，因其低功耗和高效率的特性，能够有效延长设备的使用寿命。
电源管理：
- 在开关电源和电源开关应用中，2N7002K_R1_00001表现出色，可以用作功率放大器的驱动元件，提升整个电源的效率。
信号开关：
- 在数字电路及信号调理电路中，MOSFET能够用作信号控制开关，支持高频信号的传递与切换。
LED驱动：
- 可以用来驱动LED照明系统作为开关元件，保证平稳且高效的电流输出，确保LED的亮度和延长使用寿命。
四、总结
2N7002K_R1_00001 N 沟道 MOSFET以其卓越的电气性能、紧凑的封装、良好的开关特性和广泛的应用场景，成为市场上非常受欢迎的选择。无论是在低功耗便携式设备，还是在复杂的电源管理及自动化控制系统中，2N7002K_R1_00001 无疑是一个理想的解决方案。
选择PANJIT的2N7002K_R1_00001，不仅可以享受高性价比的优势，还可以获得强大的技术支持和优质的售后服务。这款MOSFET是实现高效能、低功耗电子电路的理想元件，值得设计师和工程师的信赖与使用。
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