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PANJIT 2N7002K_R1_000Z9
Configuration
1 options
Configuration
20+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- PANJIT 2N7002K_R1_000Z9
- Type
- PANJIT
- Minimum package
- 3000
Technical parameters
- Electronic Component
- PANJIT
- Electronic Component
- 2N7002K_R1_000Z9
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.026g
- Electronic Component
- 1
- Electronic Component
- BM69415771
- Operating Temperature
- 55℃~+150℃
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- 3000
- Voltage(Vdss)
- 60V
- Capacitor(Ciss)
- 35pF
- Output Capacitor(Coss)
- 10pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
产品概述：2N7002K_R1_000Z9
一、基本信息 2N7002K_R1_000Z9 是由强茂（PANJIT）公司制造的一款绝缘栅场效应管（MOSFET）。此型号封装为SOT-23（SOT-23-3），这是一种小型化、高性能的封装形式，适合于大规模自动化贴装和 PCB（印刷电路板）设计。这款MOSFET专为广泛的低功耗和开关应用而设计，具有低门阈电压和出色的开关特性，使其在现代电子电路中得到了广泛的应用。
二、产品特性
- 高效能：2N7002K在低门电压（VGS）下表现出色的控制能力，使其适合于高频应用和快速开关操作。
- 小型封装：SOT-23封装具有紧凑的尺寸，非常适合低空间要求的设计，满足移动设备和便携式电子设备的需求。
- 低导通电阻：该MOSFET具有较低的RDS(on)，可以有效降低导通损耗，提升整体电路效率。
- 高输入阻抗：由于MOSFET的绝缘栅设计，2N7002K具有高输入阻抗，减少对前级电路的负载影响。
三、技术参数
- 最大漏极源极电压（VDS）：60V，足以承受多种电路环境的需求。
- 最大漏极电流（ID）：200mA，符合大多数小功率应用的标准。
- 门阈电压（VGS(th)）：通常在2-4V之间，适合于低电压控制应用。
- 导通电阻（RDS(on)）：在VGS=10V时，其典型值在0.5Ω左右，能有效控制热量的生成。
四、应用场景 由于其高度的灵活性和可靠性，2N7002K_R1_000Z9 可用于多种实际应用，包括但不限于：
- 开关电源：在开关电源中，2N7002K可作为高效的开关器件，有助于减小电源的损失和提高功率效率。
- 射频（RF）开关：适用于处理小功率的高频RF信号，可在无线通信设备中看到其身影。
- 驱动电路：2N7002K可以用于驱动小型电机、继电器或其他负载设备，适合自动化控制系统中。
- 信号放大器：在音频和视频设备中，也可使用该MOSFET进行信号放大和补偿。
五、总结 2N7002K_R1_000Z9是强茂推出的一款高性能低功耗MOSFET，凭借其优良的电气特性和紧凑的SOT-23封装，使其在现代电子设备中得到了广泛应用。其良好的开关性能和高输入阻抗，使其非常适合用于各种电子电路中的开关和放大应用。选择2N7002K_R1_000Z9，将为你的设计带来更高的效率、更小的失真，并推动你的产品实现卓越的性能表现。
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