WMSIC Electronic Components

PUYA PY25Q32HB-SUH-IR PY25Q32HB

ModelPY25Q32HB-SUH-IR
PackageSOP-8-208mil
BrandPUYA
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
PUYA PY25Q32HB-SUH-IR
Type
SOP-8-208MIL
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
PUYA
Electronic Component
PY25Q32HB-SUH-IR
Electronic Component
1
Package
SOP-8-208mil
Electronic Component
NOR FLASH
Electronic Component
0.176g
Electronic Component
1
Features
positions
Electronic Component
BM0264679581
Electronic Component
32Mbit
Operating Temperature
40℃~+85℃
Operating Voltage
2.3V~3.6V
Current
18uA
Interface Type
SPI
Electronic Component
100000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

PY25Q32HB-SUH-IR 产品概述

一、产品简介

PY25Q32HB-SUH-IR 是普冉(PUYA)推出的一款 32Mbit 串行闪存(SPI Flash),专为高产量消费类与嵌入式产品设计。器件常用于存放程序代码并在上电后将代码复制(shadow/execute-in-place)到嵌入式或外部 RAM 中执行;同时其灵活的擦除架构也适合作为系统数据存储使用,无需额外存储器。

二、主要规格

  • 接口类型:SPI(高速串行接口)
  • 存储容量:32 Mbit
  • 最高时钟频率 (fc):133 MHz
  • 工作电压:2.3 V ~ 3.6 V
  • 待机电流:18 μA
  • 页写入时间 (Tpp):约 400 μs/页
  • 块擦除时间 (tBE):约 120 ms/块
  • 擦写寿命:100,000 次
  • 数据保留 (TDR):20 年
  • 工作温度范围:-40 ℃ ~ +85 ℃
  • 封装:SOP-8-208mil
  • 品牌:PUYA(普冉)

三、功能特性

  • 硬件写保护:通过外部写保护机制可防止误写或擦除。
  • 写使能锁存:标准的写使能/禁止流程,保证写操作可控。
  • 软件写保护:支持软件层面的区域保护,细化防护粒度。
  • 上电复位(POR):确保上电后器件进入确定性状态。
  • 灵活擦除粒度:支持扇区/块擦除,便于对程序与数据分别管理。

四、性能与可靠性

PY25Q32HB 提供高达 133 MHz 的 SPI 时钟支持,满足对启动速度与代码执行时间的要求。器件的擦写寿命达 10^5 次,数据保留 20 年,适合多数消费类与工业级嵌入式应用。典型写入与擦除延时(Tpp≈400 μs / tBE≈120 ms)在系统设计中易于预测与调度。

五、封装与外观

采用 SOP-8-208mil 标准封装,适配常见的 DIP 插板以及自动化贴装工艺,便于在低成本或空间受限的系统中集成。

六、典型应用

  • 引导存储(Boot ROM)与程序镜像存放
  • 音视频设备、路由器与智能家居固件存储
  • 工业控制器与仪表的参数与日志保存
  • 可穿戴与移动设备的固件更新存储

七、设计注意事项

  1. 电源稳压与去耦:建议在 VCC 端并联 0.01–0.1 μF 去耦电容以抑制瞬态噪声,保证 2.3–3.6 V 工作电压稳定。
  2. 写保护策略:合理使用硬件写保护与软件写保护组合,避免在关键时刻误擦写。
  3. 时序与时钟选择:在高频(接近 133 MHz)工作时注意 PCB 布线、终端和驱动能力,确保信号完整性。
  4. 擦写与寿命管理:对于频繁更新的数据,考虑采用磨损均衡或日志式写入以延长器件寿命。

若需更详细的电气时序图、命令集及典型应用电路,请参阅厂家数据手册或联系供应商获取完整设计资料。

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