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Prisemi PZ3D4V2H
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Prisemi PZ3D4V2H
- Type
- PRISEMI
- Minimum package
- 3000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- PRISEMI
- Electronic Component
- PZ3D4V2H
- Electronic Component
- 1
- Package
- SOD-323
- Electronic Component
- Zener Diode
- Electronic Component
- 0.03g
- Electronic Component
- 1
- (Zzk)
- 500Ω
- (Zzt)
- 55Ω
- Electronic Component
- BM0227760370
- Diode
- 1
- Current(Ir)
- 5uA
- Power Dissipation(Pd)
- 500mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
PZ3D4V2H 产品概述
一、简介
PZ3D4V2H 是 Prisemi（芯导）推出的一款独立式稳压二极管，标称稳压值为 5.1V，适用于小电流低功耗稳压和过压保护场合。器件采用 SOD-323 小型表贴封装，便于空间受限的便携设备和消费类电子产品使用。
二、主要参数
- 稳压值（标称）：5.1V
- 最大耗散功率 Pd：500 mW（器件功耗限制，须考虑散热）
- 反向电流 Ir：5 μA（在指定反向电压条件下）
- 阻抗：Zzk = 500 Ω；Zzt = 55 Ω（表征击穿区和测试点的动态阻抗特性）
- 配置：独立式二极管
- 封装：SOD-323（表贴）
三、特性与优点
- 小封装、高密度：SOD-323 体积小，适合现代小型化 PCB 布局。
- 低反向泄漏：Ir = 5 μA 有利于待机/低功耗电路保持低损耗。
- 稳定的稳压性能：Zzt=55 Ω 表明在测试电流下具有较小的动态阻抗，稳压更稳定。
- 额定耗散 500 mW，适合中小功率稳压和限压保护（需注意封装散热限制）。
四、典型应用
- 小功率稳压参考源（如 5V 近似稳压场合）
- 输入过压保护与浪涌钳位
- 电平移位、信号夹位和保护二极管
- 便携设备、传感器前端及通信终端的低功耗电源管理
五、电路与设计注意事项
- 串联限流电阻：稳压二极管通常工作在反向击穿区，需与限流电阻配合使用。计算公式：R = (Vin - Vz) / Iz，Iz 为期望的稳压电流（加上负载电流）。
- 功率与散热：SOD-323 封装的热阻较大，500 mW 为器件极限耗散。在高环境温度或连续高电流场合，应限制电流或增加散热路径以避免器件过热。
- 动态阻抗影响：Zzk 和 Zzt 提示在不同工作点下稳压特性，选取工作电流时应兼顾稳压精度与功耗。
- 反向泄漏对精密电路影响较小但需评估在高阻抗节点的偏置影响。
六、封装、焊接与采购建议
- 封装为 SOD-323，适用常规回流焊工艺；焊接时遵循制造商给出的回流温度曲线以保证可靠性。
- 建议在产品设计初期参考官方完整数据手册（典型特性曲线、最大额定值、测试条件等），并在实际工况下进行老化与热测试。
- 采购时请确认完整料号与包装形式，并向可信分销商索取原厂数据表与质量认证文件。
以上为 PZ3D4V2H 的主要技术与应用要点，实际设计和选型请结合数据手册的详细电气特性曲线与封装机械图进行最终确认。
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