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Prisemi PSBD2FD40V1H
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Prisemi PSBD2FD40V1H
- Type
- PRISEMI
- Minimum package
- 10000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- PRISEMI
- Electronic Component
- PSBD2FD40V1H
- Electronic Component
- 1
- Package
- DFN1006-2L
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.009g
- Electronic Component
- 1
- Electronic Component
- BM0226527383
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 100uA@40V
- (Vf)
- 600mV@1A
- Electronic Component
- 55℃~+125℃
- Electronic Component
- Electronic Component
- Electronic Component
- 10000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
PSBD2FD40V1H 产品概述
一、简介
PSBD2FD40V1H 是芯导（Prisemi）推出的一款肖特基整流二极管，采用 DFN1006-2L 小型封装，面向空间受限且要求低损耗的电源和整流应用。器件具有宽工作结温范围，适合工业级和消费类设备使用场景。
二、主要电气参数
- 直流整流电流（Io）：1 A
- 正向压降（Vf）：约 600 mV @ 1 A
- 反向耐压（Vr）：45 V
- 反向电流（Ir）：100 μA @ 40 V（典型测试条件）
- 非重复峰值浪涌电流（Ifsm）：5 A
- 工作结温范围：-55 ℃ ~ +125 ℃
- 封装：DFN1006-2L
三、性能特点
- 低正向压降：在 1 A 工作点上 Vf ≈ 0.6 V，有利于降低整流损耗和功耗发热。
- 低反向泄漏：在 40 V 时 Ir 典型为 100 μA，适合低漏电和能效敏感的电路。
- 抗冲击能力：支持 5 A 非重复峰值浪涌，可应对启动和短时过载脉冲。
- 宽温区工作：-55 ℃ 至 +125 ℃，适用于工业级环境。
- 小型封装：DFN1006-2L 有利于高密度 PCB 布局和空间受限的终端产品。
四、典型应用
- 开关电源的输出整流与续流二极管（低压大电流域）。
- DC-DC 降压/升压模块的肖特基整流。
- 便携设备、电池管理与反向保护电路。
- LED 驱动、电机驱动与功率转换单元中作为快速整流元件。
五、封装与散热建议
DFN1006-2L 为裸露焊盘封装，热阻受 PCB 散热影响较大。设计时建议：
- 在焊盘下和周围布置尽可能大的铜箔和多层接地/散热平面，以降低结温。
- 必要时在器件底部及周围增加过孔与内部散热层连接，提升热扩散能力。
- 注意器件在 1 A 工作时的功耗约为 Vf×I ≈ 0.6 W，应做好热沉与 PCB 散热计算并在高温下进行电流降额。
六、设计与可靠性注意事项
- 反向泄漏随结温显著上升，长期高温高反向压会加速泄漏和热失控，应在系统级进行裕量设计。
- 避免反复超过 Ifsm 的浪涌事件，若有较大浪涌需求应外加限流或选择更高峰值规格的器件。
- 焊接时遵循厂家推荐的回流温度曲线，避免过热损伤封装与内部粘接结构。
- 在关键应用中建议参考完整数据手册并做实测验证（如热仿真、寿命试验）。
七、结语
PSBD2FD40V1H 以其低正向压降、小型化封装和良好的浪涌能力，适合用于空间受限且要求能效的整流与保护场景。具体设计中请结合 PCB 散热、热降额及真实工作波形进行验证，确保长期可靠运行。若需更详细的参数或封装尺寸，请参考芯导官方资料或联系供应商获取完整数据手册。
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