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Prisemi PPM723T201E0
Configuration
1 options
Configuration
Electronic Component
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Prisemi PPM723T201E0
- Type
- PRISEMI
- Minimum package
- 10000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- PRISEMI
- Electronic Component
- PPM723T201E0
- Electronic Component
- 1
- Package
- SOT-723
- Electronic Component
- 1 P
- Electronic Component
- MOSFET
- Electronic Component
- 0.01g
- Electronic Component
- 1
- Electronic Component
- BM0265750664
- Power Dissipation(Pd)
- 150mW
- Gate Voltage(Vgs)
- ±10V
- Electronic Component
- Electronic Component
- Electronic Component
- 10000
- Voltage(Vdss)
- 20V
- Capacitor(Ciss)
- 110pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
PPM723T201E0 — Prisemi (芯导) 20V P沟道 MOSFET（SOT-723）产品概述
一、产品简介
PPM723T201E0 是 Prisemi（芯导）推出的一款小封装 P 沟道场效应管，采用超小型 SOT-723 封装，面向便携式和板级电源管理场景。器件在轻载高侧开关与反向阻断、低压域电源切换等应用中表现优异，兼顾低电容与低栅荷的快速切换特性。
二、主要电气参数
- 类型：P 沟道 MOSFET
- 漏源耐压 Vdss：20 V
- 连续漏极电流 Id：800 mA
- 导通电阻 RDS(on)：450 mΩ @ Vgs = 4.5 V
- 总栅电荷 Qg：1.4 nC @ Vgs = 4.5 V
- 输入电容 Ciss：110 pF
- 反向传输电容 Crss：5 pF
- 输出电容 Coss：9 pF
- 封装：SOT-723（超小外形，适合高密度 PCB）
三、主要特性与优势
- 低电阻、适用于小电流高侧开关：450 mΩ 的导通电阻在 800 mA 级别负载下可保证较低的功耗。
- 小栅极电荷与中等输入电容：Qg = 1.4 nC 与 Ciss = 110 pF 有利于减少门极驱动能量与提升开关速度，适合电源管理与快速断开场景。
- 极小封装尺寸：SOT-723 适用于空间受限的移动设备、可穿戴与 IoT 模块。
- 低 Crss 有利于减小开关时的 Miller 效应，便于精确控制开关瞬态。
四、典型应用场景
- 电池供电设备的高侧负载开关与电源路径选择
- 便携式设备、可穿戴、蓝牙模块等板级电源管理
- 反向电流阻断（反接保护）与简单的负载断电控制
- 低功耗、快速切换需求的电源分配与负载隔离
五、使用建议与布局要点
- 栅极驱动：规格中以 Vgs = 4.5 V 时给出 RDS(on)，实际设计时应确保栅源电压有足够幅度以获得期望导通；P 沟道 MOSFET 在高侧通常以源接正电位，栅极施加低于源的电压以导通。
- 热管理：SOT-723 封装散热能力有限，长时间接近额定电流时会产生明显温升。建议使用较宽的铜箔散热环与热过孔，PCB 上保守控制电流和功耗。
- 噪声与开关过渡：尽管 Qg 和 Ciss 不大，但快速切换仍可能产生尖峰，建议在门极串入小阻以限制 dv/dt 并在必要处并联 RC 吸收网络。
- 布局：最小化漏-源和栅极回路的寄生电感与电阻，靠近 MOSFET 放置去耦电容以抑制瞬态电压。
六、封装与选型注意
SOT-723 的优点是尺寸小，但也带来功耗与热阻限制。选型时请参考完整数据手册确认最大栅源电压、脉冲/短时电流能力、热阻（RθJA）与封装引脚安排。针对不同应用，若需承载更大电流或更低 RDS(on)，可考虑更大封装或并联多只器件。
如需器件完整电气特性曲线、温度相关参数或推荐电路，请参照 Prisemi 官方数据手册或联系供应商获取样品与技术支持。
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