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Prisemi PTVSHC3D4V5B
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Prisemi PTVSHC3D4V5B
- Type
- PRISEMI
- Minimum package
- 3000 编带
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- PRISEMI
- Electronic Component
- PTVSHC3D4V5B
- Electronic Component
- 1
- Package
- SOD-323
- Electronic Component
- Electronic Component
- Type
- ESD
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.03g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Cj- Capacitor
- 260pF
- Electronic Component
- BM0227751983
- Voltage
- 11V；21V；14V；24V
- Electronic Component
- IEC 61000-4-4；IEC 61000-4-2
- Current(Ir)
- 2uA
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
PTVSHC3D4V5B 产品概述
一、概述与定位
PTVSHC3D4V5B 是 Prisemi（芯导）推出的一款双向瞬态抑制二极管（TVS/ESD），用于对低压敏感线路提供静电放电和浪涌保护。器件封装为 SOD-323，单路设计，适合空间受限的消费电子、通信及工业控制终端的接口防护。
二、主要电气参数
- 极性：双向（bidirectional），适合差分或双向传输线的过压钳制。
- 反向截止电压 Vrwm：4.5 V（工作稳态电压），适配 5V 类电源或信号线。
- 击穿电压 Vbr：4.6 V（典型），开启保护动作的阈值。
- 钳位电压（典型）：11 V、14 V、21 V、24 V（根据冲击能量和测试条件不同，器件在 8/20µs 测试下的钳位表现会有差异）。
- 峰值脉冲电流 Ipp：20 A（8/20µs 波形）。
- 峰值脉冲功率 Ppp：2.4 kW @ 8/20µs。
- 反向漏电流 Ir：2 µA（在 Vrwm 下小电流泄漏）。
- 结电容 Cj：约 260 pF（对高速信号线会产生一定影响，需在设计时评估）。
三、认证与防护等级
- 满足 IEC 61000-4-2（静电放电）和 IEC 61000-4-4（电快速瞬变）相关测试要求，适合主流 ESD/ EFT 抗扰度设计。
四、典型应用场景
- USB、串口、CMOS 摄像头等 5V 或低压差分/双向接口的输入端防护。
- 消费电子、便携设备、机顶盒、路由器、工业控制器等对静电敏感的外部接口。
- 需要体积小、成本低且具备可重复承受短脉冲能量能力的场合。
五、设计与使用建议
- 布局：器件应尽量靠近受保护的连接器或引脚，走线最短，接地回路低阻抗。
- 热管理：在频繁或高能量冲击环境下，注意器件及周边散热，避免长期高能量吸收导致失效。
- 信号完整性：260 pF 的结电容对高频信号（如高速 USB、接口）可能造成影响，必要时评估是否采用低电容型 TVS 或在信号侧增加阻抗匹配组件。
- 并联/选型：若单个器件无法满足更高的脉冲电流或更低钳位要求，可考虑并联使用或选择更高功率等级的 TVS。
六、封装与订购信息
- 封装：SOD-323，小封装利于表面贴装自动化生产。
- 品牌：Prisemi（芯导）。型号：PTVSHC3D4V5B。
- 建议在订购前确认所需钳位与结电容对系统的影响，以及批量测试以确保在目标应用中的可靠性。
如需针对具体接口（例如 USB2.0、RS-485、摄像头接口）提供接线示意或信号完整性影响评估，我可以进一步给出推荐电路与布局示意。
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