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Prisemi PTVSHC3N12VU
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- Prisemi PTVSHC3N12VU
- Type
- PRISEMI
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- PRISEMI
- Electronic Component
- PTVSHC3N12VU
- Electronic Component
- 1
- Package
- DFN-3(2x2)
- Type
- TVS
- Electronic Component
- ESD and Surge Protection (TVS / ESD)
- Electronic Component
- 0.032g
- Electronic Component
- 1
- Channel Count
- Electronic Component
- Cj- Capacitor
- 1nF
- Electronic Component
- BM0256938793
- Voltage
- 30V
- Electronic Component
- IEC 61000-4-4；IEC 61000-4-5；IEC 61000-4-2
- Current(Ir)
- 1uA
- Voltage(VBR)
- 14.5V
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
PTVSHC3N12VU 产品概述
一、产品简介
PTVSHC3N12VU 是 Prisemi（芯导）推出的一款单路瞬态电压抑制（TVS）二极管，采用 DFN-3（2×2）无铅封装，专为对电源轨和低速信号线提供高能脉冲与静电放电保护而设计。器件对 IEC 61000-4-2（静电放电）、IEC 61000-4-4（电快速瞬变）及 IEC 61000-4-5（雷击浪涌）等工业级抗扰度标准具有良好兼容性，适用于紧凑型电子设备的浪涌与 ESD 防护。
二、主要技术参数
- 反向截止电压 (Vrwm)：12 V
- 击穿电压 (Vbr)：14.5 V
- 钳位电压 (Vc)：30 V（峰值条件）
- 峰值脉冲电流 (Ipp)：200 A @ 8/20 μs
- 峰值脉冲功率 (Ppp)：5 kW @ 8/20 μs
- 反向电流 (Ir)：1 μA（常温、Vrwm 下）
- 结电容 (Cj)：约 1000 pF
- 通道数：单路（单通道）
- 封装：DFN-3（2×2）3 引脚，Pb-Free
三、产品特点
- 高能抗冲击：支持 200 A（8/20 μs）峰值脉冲电流与 5 kW 峰值功率，能有效吸收雷电浪涌及开关冲击能量。
- 低漏电流：工作电压下漏电低至 1 μA，适合对功耗敏感的应用场景。
- 可靠钳位：在脉冲事件中钳位电压约 30 V，能在短时间内保护下游电路不被过压损坏。
- 小型封装：DFN-3（2×2）体积小，适合空间受限的移动终端、便携设备及板级保护。
- 工业级兼容：通过多项 IEC 抗扰度标准验证，适用于工业与民用环境的电磁兼容需求。
四、典型应用
- 12 V 及以下电源轨保护（电源输入、逆变器输入、DC-DC 入口）
- 工业控制设备的浪涌与 ESD 防护
- 通用 I/O 口、开关电源端口、传感器供电保护（非高速差分信号）
注意：由于结电容约 1000 pF，器件不适合用于高速数据线（如 USB 3.x、PCIe 等）或对信号完整性要求高的差分通道。
五、封装与 PCB 布局建议
- 将器件靠近受保护引脚放置，缩短布局中的走线长度以降低感抗和回路面积。
- GND 引脚或底部散热焊盘应与系统地平面通过多孔过孔连接，提高能量散逸能力与热稳定性。
- 对于高能量脉冲，建议在器件附近采用较宽的接地铜箔并增加过孔密度，以便快速将脉冲能量导入地平面。
- 在多分支保护场景下，确保各保护器件的参考地相互独立或采用合理的星形接地，避免地环路干扰。
六、可靠性与采购信息
PTVSHC3N12VU 由 Prisemi（芯导）制造，采用无铅工艺，适用于商业与工业等级应用。订购时请确认包装形式与批次检验报告（如需），并在实际系统中进行浪涌与 ESD 实测验证以确定匹配的保护性能。若需替代型号或更低电容/更高带宽的保护器件，可根据具体信号速率与系统电压选择相应的 TVS 器件。
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