WMSIC Electronic Components

Prisemi PSBD1DF40V1H

ModelPSBD1DF40V1H
PackageSOD-123F
BrandPRISEMI
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Prisemi PSBD1DF40V1H
Type
PRISEMI
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
PRISEMI
Electronic Component
PSBD1DF40V1H
Electronic Component
1
Package
SOD-123F
Electronic Component
Switch Diode
Electronic Component
0.031g
Electronic Component
1
Electronic Component
BM0227760372
Current
1A
Diode
1
Current(Ir)
300uA@40V
(Vf)
550mV@1A
Electronic Component
55℃~+150℃@(Tj)
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

PSBD1DF40V1H 产品概述

一、产品简介

PSBD1DF40V1H 是 Prisemi(芯导)推出的一款开关二极管,封装为 SOD-123F,面向开关整流与一般功率整流应用。器件额定直流正向电流为 1A,直流反向耐压(Vr)为 40V,具有较低的正向压降(Vf)和可观的浪涌承受能力,适合在宽温度范围内工作的工业与消费类电子设备。

二、主要电气性能

  • 工作结温范围:-55℃ ~ +150℃(Tj)
  • 额定整流电流:1A(DC)
  • 正向压降(Vf):0.55V @ 1A
  • 非重复峰值浪涌电流(Ifsm):40A(一次性非重复脉冲)
  • 直流反向耐压(Vr):40V
  • 反向电流(Ir):300µA @ 40V

这些参数表明器件在常规 1A 负载下具有较低的功耗(在 1A 时正向功耗约 0.55W),且能承受短时的大电流冲击。但反向漏电流在满耐压时偏大,需要在高阻或精密电路中加以注意。

三、封装与热机械特性

  • 封装:SOD-123F(表面贴装) SOD-123F 小巧、平面化,适合自动化贴装和中小功率电路板设计。该封装在散热方面优于更小的 SOD-323 等微封装,但仍需在印制板设计中注意铜箔面积与散热路径以保证长期可靠性。由于工作结温上限为 +150℃,在高温或高功耗环境下建议进行适当的热仿真与器件散热条件评估。

四、典型应用场景

  • 开关电源整流与续流二极管(中小功率 DC-DC、AC-DC)
  • 逆极性保护、输入保护(限于 Vr ≤ 40V 的电源轨)
  • 浪涌吸收与短时过载保护(利用 Ifsm 的一次性冲击能力)
  • 汽车电子及工业控制类产品(温度范围覆盖较严苛的工作环境)
  • 一般功率整流与开关切换应用

注意:在高精度或高阻抗线路(例如采样电路、精密测量输入)使用时,应评估反向漏电流对系统的影响。

五、设计与使用建议

  1. 热管理:在 1A 持续工作下,二极管自身正向功耗约为 0.55W,印制板应通过增加铜箔面积和热过孔改善散热。若工作环境接近高温端(例如靠近热源或封闭空间),需对结温进行 derating。
  2. 浪涌使用:Ifsm = 40A 为非重复峰值冲击能力,适用于短时浪涌或启动冲击。若电路存在重复或周期性大电流脉冲,应选择能承受重复峰值的器件或外加限流/吸收网络。
  3. 反向漏流:Ir 在 40V 时为 300µA,若电路对待机漏电或偏置电流敏感,应避免在接近 Vr 的电压下持续存在,或在设计中加入并联分流/偏置措施。
  4. 极性与封装:SOD-123F 的极性标识需严格与 PCB 丝印对应,焊接时遵循厂商推荐的回流温度曲线以避免热损伤。
  5. ESD 与瞬态:对于存在大幅瞬态脉冲或静电风险的环境,建议并联瞬态抑制器(TVS)或 RC 抑制网络以保护器件与下游电路。

六、选型与替代考虑

在选型时若需要更低的反向漏电、更高的耐压或更高的连续电流能力,可考虑:

  • 若需更高 Vr(>40V),寻找同类封装更高耐压器件;
  • 若需更低 Vf 或更高 Ifsm,可选择更低导通电阻或更大封装的功率二极管;
  • 若对漏电极其敏感,可考虑肖特基二极管,但需评估其反向耐压与温度特性。 建议在最终选型前对比器件完整数据表并结合实际运行工况做仿真/测试。

七、小结

PSBD1DF40V1H 是一款适用于中小功率开关整流与保护应用的开关二极管,具有 1A 的整流电流能力、0.55V 的低正向压降以及 40A 的一次性峰值浪涌承受能力。封装为 SOD-123F,适合自动贴装和空间受限的板级设计。在使用时需注意反向漏电随温度上升而增加、热管理与峰值脉冲的限值要求。具体电气与热机械细节应参考厂商完整数据手册以便进行可靠性与电路优化设计。

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