WMSIC Electronic Components

ROHM 2SK3018T106

ROHM 2SK3018T106
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Product image

Model2SK3018T106
PackageSOT-323
BrandROHM
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

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Technical data

Product details

20 specifications

Core information

Product name
ROHM 2SK3018T106
Type
ROHM
Unit
Electronic Component
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ROHM
Electronic Component
2SK3018T106
Electronic Component
1
Package
SOT-323
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.025g
Electronic Component
1
Electronic Component
BM0000278959
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
200mW
Electronic Component
Electronic Component
Electronic Component
3000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2SK3018T106 产品概述

基础信息： 2SK3018T106是一款N沟道金属氧化物场效应管（MOSFET），其设计旨在满足低功耗电子电路的需求。此器件由知名品牌ROHM（罗姆）制造，具有优异的电气特性和热管理能力，适用于多种应用场景，包括信号放大、开关控制以及小型电源管理等。

主要参数：

  • 漏源电压（Vdss）： 该器件的最大漏源电压为30V，适合在中低压电路中使用，使其能够承受相对较高的电压而不会发生击穿。
  • 连续漏极电流（Id）： 在25°C的环境温度下，器件的连续漏极电流为100mA，这使得它能够处理小至中等电流负载。
  • 栅源极阈值电压（Vgs(th)）： 1.5V（@100µA），表明该器件在低电压下就能开始导通，适合低电压驱动。
  • 漏源导通电阻（Rds(on)）： 在10mA和4V的条件下，最大导通电阻为8Ω，这对于节能和减少发热有重要意义。
  • 功率耗散： 在环境温度为25°C时，该器件的最大功率耗散为200mW，确保其在高功率应用中具有良好的散热能力。
  • 驱动电压范围（Vgs）： 能够承受±20V的栅源电压，实现灵活的控制。
  • 输入电容（Ciss）： 在5V时，最大输入电容为13pF，这使得该器件在开关频率较高的应用中具有良好的响应特性。

封装与尺寸： 2SK3018T106的封装类型为UMT3（SC-70、SOT-323），这是一种表面贴装型封装，体积小巧，便于在紧凑的电路设计中使用。这种封装形式非常适合移动电子设备和其他空间受限的应用。

工作温度范围： 器件的工作温度高达150°C（TJ），确保其在严苛环境下能够稳定运作，适合工业设备和汽车电子等应用领域。

应用领域： 2SK3018T106的设计使其能广泛应用于各种电子设备中，包括但不限于：

  • 小型电源管理电路
  • 开关电源
  • 信号开关
  • 电池管理系统
  • 低功耗智能设备
  • 电机驱动
  • 家电控制

优势：

  1. 高效能与低能耗： 其低导通电阻和高工作温度范围意味着在高效能和节能设计中，其表现优越。
  2. 宽电压和电流范围： 满足多种电路设计需求，灵活性高。
  3. 小巧的表面贴装封装： 适用于一系列紧凑型电子产品，特别是在空间有限的应用场合。
  4. 高温稳定性： 在高温环境中具有良好的工作稳定性，降低了因过热导致的失效率。

总结： 2SK3018T106是一款具有优秀性能和高可靠性的N沟道MOSFET，适用于广泛的电子应用领域。其高耐压、低导通电阻及高功率耗散能力使得它在现代电子设计中成为一款理想的选择。通过采用此器件，设计工程师能够实现高效、可靠且经济的电路解决方案，从而增强产品的竞争力和市场表现。

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