WMSIC Electronic Components

ROHM RD3P130SPTL1

ModelRD3P130SPTL1
PackageTO-252
BrandROHM
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Electronic Component

Available for RFQ

Technical data

Product details

20 specifications

Core information

Product name
ROHM RD3P130SPTL1
Type
ROHM
Unit
Electronic Component
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
Electronic Component
Electronic Component
ROHM
Electronic Component
RD3P130SPTL1
Electronic Component
1
Package
TO-252
Electronic Component
1 P
Electronic Component
MOSFET
Electronic Component
0.46g
Electronic Component
1
Electronic Component
BM0264600844
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
20W
Electronic Component
Electronic Component
Electronic Component
2500
Voltage(Vdss)
100V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

产品概述:RD3P130SPTL1 P沟道MOSFET

基本信息

RD3P130SPTL1是一款由ROHM(罗姆)公司生产的高性能P沟道金属氧化物半导体场效应管(MOSFET),其设计关照到广泛的应用场景,适用于需要高功率和高电压的电子电路。该产品封装采用TO-252,便于表面贴装,具有较好的散热性能和机械强度,适合于现代电子设备的需求。

核心参数

  • 安装类型:RD3P130SPTL1为表面贴装型(SMD),适合自动化生产线的快速组装与精确贴装。
  • 导通电阻(Rds(On)):在6.5A和10V的条件下,其最大导通电阻为200毫欧,极低的Rds(On)使其在导通状态下能有效减少功耗和发热,从而提高系统的效率。
  • 漏极电流(Id):该MOSFET能够承受的最大连续漏极电流为13A(在25°C绝缘环境下),这一特性使其在电源开关和负载驱动等应用中表现出色。
  • 允许的漏源电压(Vdss):该器件的漏源电压最大值为100V,适合于高电压场景的应用。
  • 功率耗散:该MOSFET的最大功率耗散为20W(在Tc情况下),能够满足高功率需求的设计。

适用电压与电流

RD3P130SPTL1的工作电压等级和电流承载能力使其在多个电气环境下可放心使用。最高驱动电压为10V,栅-源电压Vgs范围为±20V,适应多种电路驱动方案。同时,其在不同Vgs条件下的栅极电荷最大值为40nC,因此在开关频率和开关损耗方面表现优异。

集成特性

  • 输入电容:在25V下,输入电容(Ciss)为最大2400pF,适合高频率的操作环境。电容特性有助于提高开关速度,符合现代高效能电路的需求。
  • 阈值电压(Vgs(th)):最大阈值电压为2.5V(在1mA条件下),这表明该器件能够在较低的控制电压下进行开关操作,从而适应更为灵活的驱动方案。

工作温度范围

该MOSFET在高达150°C的环境温度下依然能够稳定工作,确保了在恶劣温度条件下的可靠性。其高温更为优越的性能,在工业控制、汽车电子及医疗设备等高要求领域中尤为重要。

应用场景

由于RD3P130SPTL1的优异特性,它非常适合用作开关电源、电动机驱动器、负载开关、功率放大器及其他需要高效率、高可靠性的电子电路。特别适合于电源管理、电信设备、可再生能源系统等领域的设计。

总结

RD3P130SPTL1是一款高效能、高耐久性、易于集成的P沟道MOSFET。其众多优越性能与广泛的工作条件,使其成为现代电子设备的理想选择。作为ROHM公司推出的优秀产品,本器件凭借其卓越的电气性能和可靠的工作特性,将为您的电路设计和系统功能提升带来极大的便利。无论是在功率整体管理还是在特定的应用设计中,RD3P130SPTL1都将是一个不容忽视的重要组件。

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