WMSIC Electronic Components

RUILON SMD4532-470NF SMD4532

ModelSMD4532-470NF
Package1812
BrandRUILON
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
RUILON SMD4532-470NF
Type
RUILON
Minimum package
2500 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
RUILON
Electronic Component
SMD4532-470NF
Electronic Component
1
Electronic Component
3.2mm
Package
1812
Electronic Component
2
Electronic Component
(GDT)
Electronic Component
±30%
Electronic Component
0.114g
Electronic Component
4.5mm
Electronic Component
2.7mm
Electronic Component
1
Electronic Component
BM0264916553
Operating Temperature
40℃~+125℃
Capacitor
0.5pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SMD4532-470NF — 表面贴装型气体放电管(GDT)产品概述

一、产品简介

SMD4532-470NF 是一款表面贴装(SMD/1812 封装)的双极气体放电管(Gas Discharge Tube,GDT),由 RUILON(瑞隆源)提供。器件在正常工作时表现为高绝缘电阻,对电路影响极小;当出现瞬态过电压并超过击穿门限时,内部气体迅速电离导通,将危险过电压短时引导到地/返回线上,从而保护并联的电子组件或整板电路。过压消失后器件自动恢复高阻态,适用于要求高绝缘性与高能量冲击耐受能力的保护场合。

二、主要技术参数

  • 极数:2 极(双极/两端保护)
  • 直流击穿电压(Vdc):470 V(±30%)—— 实际触发范围约为 329 V 至 611 V
  • 冲击击穿电压(Vimp):800 V(典型)
  • 脉冲放电电流:2 kA(器件能承受瞬态冲击放电)
  • 极间电容:0.5 pF(低电容,适合高速信号线路)
  • 工作温度:-40 ℃ ~ +125 ℃
  • 尺寸(典型,1812 封装):长度 4.5 mm × 宽度 3.2 mm × 高度 2.7 mm
  • 封装:1812(表面贴装)
  • 品牌:RUILON(瑞隆源)
  • 精度/公差:±30%(主要用于直流击穿电压的公差说明)

三、工作原理与保护特性

  • 正常状态:GDT 内为气体介质,表现为高阻抗,几乎等同于开路,不影响电路正常工作与信号传输。
  • 触发过程:当并联两端电压超过器件击穿电压时,管内气体被电离,形成导电通道,实现快速导通,把大部分瞬态能量引入地或返回线,从而抑制被保护点上的电压峰值,保护下游器件。
  • 恢复能力:瞬态过电压消失后,气体重新复合,器件恢复高阻态,适合重复多次冲击的应用场景。
  • 低电容:0.5 pF 的极间电容使其对高速信号干扰小,适用于数据/信号线保护而不严重影响信号完整性。
  • 大电流承受:2 kA 脉冲放电能力适合雷击或电网换相瞬态等高能量冲击场合的保护需求。

四、外观与封装优势

  • 1812 封装体积小(4.5 × 3.2 × 2.7 mm),便于在空间受限的 PCB 上布局。
  • 表面贴装形式适合自动化贴装与回流焊工艺,降低装配成本并提高装配一致性。
  • 体积与电气特性平衡良好,适合电源线、通信接口、工业控制与户外设备等应用。

五、典型应用场景

  • 电信与数据通信设备(线路防雷、基站、光纤终端盒配合保护)
  • 电力与配电设备(配电箱端子、测量/保护接口)
  • 工业控制与自动化设备(传感器电缆、防护输入/输出端)
  • 消费电子与家电(电源入口、外部接口)
  • 需要高能量吸收与低寄生电容保护的场合

六、设计与安装建议

  • 布局:GDT 应尽可能靠近被保护的接口或输入端放置,以缩短高能冲击电流回路长度,减小串联阻抗与感性耦合。
  • 接地:确保良好、低阻抗的接地或返回路径。地线应尽量粗短,避免环路和长细导线。
  • 与其他保护器件配合:GDT 的触发速度比 TVS 慢、承受能量高。常采用 TVS(快速限压)与 GDT(高能吸收)串联或并联组合,以兼顾响应速度与高能量承受能力。
  • 回流焊温度:遵循 PCB 装配工艺的回流温度规范,避免超出器件制造商给定的温度限制。
  • 额定与安全余量:选择时考虑系统最大可能出现的瞬态能量与重复冲击次数,预留安全裕量。

七、可靠性与环境适应

  • 宽温工作范围(-40 ℃ 至 +125 ℃)适应工业级与户外环境。
  • GDT 采用封装与气体配方设计,能承受多次高能冲击并恢复绝缘状态,但长期反复超额冲击会降低寿命,应在系统级进行能量管理与监控。
  • 推荐在设计验证阶段做实际冲击测试(在目标系统的等效接地与布线条件下)以确认保护性能与寿命。

八、选型与采购注意

  • 若需更快响应或更低钳位电压,可考虑与 TVS 二极管搭配使用;若应用对电容极其敏感,需核对极间电容规格。
  • 选择时注意直流击穿电压公差(±30%)对触发门限的影响,并结合被保护电路允许的最大工作电压确定合适型号。
  • 订购时核实制造商与规格一致性,并向供货方确认冲击测试条件与典型寿命数据(若需保证长期可靠性,可要求更多测试报告)。

如需该器件的封装图、焊盘建议或在特定系统中的保护方案(如与 TVS 的串联方案、电路布局示意),可进一步提供电路环境与保护要求以便给出更针对性的建议。

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