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RUILON SMD5050-075NA SMD5050
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- RUILON SMD5050-075NA
- Type
- RUILON
- Minimum package
- 1000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- RUILON
- Electronic Component
- SMD5050-075NA
- Electronic Component
- 1
- Electronic Component
- 5mm
- Package
- SMD,5x4.2mm
- Electronic Component
- 2
- Electronic Component
- (GDT)
- Electronic Component
- ±30%
- Electronic Component
- 0.782g
- Electronic Component
- 4.2mm
- Electronic Component
- 5mm
- Electronic Component
- 1
- Electronic Component
- BM0264254859
- Operating Temperature
- 40℃~+125℃
- Capacitor
- 0.8pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SMD5050-075NA 产品概述
一、产品简介
SMD5050-075NA 是 RUILON（瑞隆源）推出的表面贴装气体放电管（GDT），采用陶瓷管封装并充入稀有气体，为线路上的瞬时过电压提供备用放电通道。方形 SMD 封装便于自动贴片与回流焊工艺，陶瓷外壳与镍合金连接器保证了高能量承载能力和长期稳定性，适用于对带宽与寄生电容有严格要求的系统。
二、主要参数
- 极数：2 极（双极）
- 直流击穿电压 Vdc：75 V（±30%）
- 脉冲放电电流：5 kA（单次脉冲能力）
- 极间电容：0.8 pF（低关态电容）
- 冲击击穿电压 Vimp：600 V
- 工作温度范围：-40 ℃ ~ +125 ℃
- 外形尺寸：4.2 mm × 5.0 mm × 5.0 mm
- 品牌：RUILON（瑞隆源）
三、关键特性
- 低关态电容（≈0.8 pF），在两端电压变化时电容值保持稳定，兼容宽带与高速信号线。
- 高脉冲承受能力（5 kA），可处理由雷击或开关冲击引起的大能量瞬态。
- 陶瓷封装与镍连接件实现高可靠的导流路径和耐久的机械强度。
- 方形 SMD 形式支持自动化贴装、节省 PCB 面积并方便批量生产。
四、典型应用
- 宽带通信设备与光纤接入节点的过电压保护。
- 多媒体终端、机顶盒与家庭网关的输入端防雷防浪涌。
- 电信交换设备、端口保护（RJ 接口、同轴线、差分对）等。
- 工业控制与安防系统中的外围瞬态保护。
五、封装与尺寸
SMD 方形表面贴装封装，外形尺寸 4.2 × 5.0 × 5.0 mm，适配常规 5050 类焊盘设计。封装材料为陶瓷，端子为镍或镀层金属，便于焊接并在高电流脉冲时提供低阻抗路径。具体焊盘尺寸与回流曲线建议依据制造商应用说明调整。
六、使用与设计建议
- 将 GDT 放置于被保护端口靠近入线位置，尽量缩短与接地的回路路径，以减少环路感应电压。
- 与低通滤波、浪涌抑制器件（如 TVS）配合使用，可形成多级过压保护方案：GDT 负责大能量脉冲，TVS 负责钳位小幅过压。
- 对高速信号应用注意保持对称布局，并控制寄生电容与阻抗匹配。
- 在高海拔或严苛环境应用前进行实际放电试验验证。
七、可靠性与环境条件
工作温度范围 -40 ℃ 至 +125 ℃，适应工业级工作环境。陶瓷与金属端子结构提供良好的机械与热稳定性。建议在长期可靠性需求较高的场景下，参照 JEDEC 相应检验标准并进行温度循环与高低温储存测试。
八、订购信息与备注
型号：SMD5050-075NA，品牌：RUILON（瑞隆源）。封装形式为 SMD 方形，具体包装（卷盘/托盘）与批量价格请向供应商或代理咨询。选型时注意直流击穿电压的 ±30% 公差及应用端允许的触发水平，必要时通过实验验证触发电压与放电行为。
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