WMSIC Electronic Components

RENESAS AT25SF321B-SSHB-T AT25SF321B

ModelAT25SF321B-SSHB-T
PackageSOIC-8
BrandRENESAS
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
RENESAS AT25SF321B-SSHB-T
Type
RENESAS
Minimum package
4000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
RENESAS
Electronic Component
AT25SF321B-SSHB-T
Electronic Component
1
Package
SOIC-8
Electronic Component
NOR FLASH
Electronic Component
0.5g
Electronic Component
1
Electronic Component
BM0264972406
Electronic Component
32Mbit
Operating Temperature
40℃~+85℃
Operating Voltage
2.7V~3.6V
Current
25uA
Interface Type
SPI
Electronic Component
100000
Clock Frequency(fc)
108MHz

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

AT25SF321B-SSHB-T 产品概述

一、产品概述

AT25SF321B-SSHB-T 是 RENESAS(瑞萨)推出的一款 32Mbit SPI NOR Flash 存储器,采用四线 I/O(Quad I/O)接口,支持高达 108 MHz 的时钟频率,工作电压范围 2.7V 至 3.6V,封装为 8 引脚 SOIC(8-SOIC)。该器件针对需要高速读写、可靠数据保持与简单片上控制的嵌入式系统而设计,适用于固件存储、配置信息保存和快速随机读取场景。

二、主要参数与特性

  • 存储容量:32 Mbit(4 MB)
  • 接口类型:SPI,四 I/O(Quad I/O)支持高吞吐
  • 最大时钟频率:fc = 108 MHz
  • 工作电压:2.7 V ~ 3.6 V
  • 待机电流:25 μA(低功耗待机)
  • 擦写寿命:100,000 次(典型)
  • 页写入时间(Tpp):3 ms(单页编程)
  • 块擦除时间(tBE):300 ms @ 4 KB 块
  • 数据保留(TDR):20 年
  • 工作温度:-40 ℃ ~ +85 ℃
  • 功能特性:硬件写保护、写使能锁存(WEL)、软件写保护(保护寄存器/区域)

三、性能与可靠性

该器件在高速 SPI 总线下能够提供快速读取性能,配合四 I/O 模式可显著提升连续数据传输效率。典型写入与擦除时间(页写入 3 ms、4KB 块擦除 300 ms)适合固件升级与配置数据更新场景。100k 次擦写寿命与 20 年的数据保留保证了长期可靠性,对工业级温度范围(-40 ℃ 至 +85 ℃)的支持,使其能在严苛环境下稳定运行。硬件写保护与软件写保护功能可防止误写,写使能锁存(WEL)提供额外的写操作安全机制。

四、封装与引脚

封装形式为 SOIC-8(8-SOIC),便于在标准 PCB 布局上实现紧凑安装与自动化贴装。器件引脚对应典型 SPI 信号(CS、CLK、IO0~IO3、VCC、GND 等),兼容常见微处理器与 SPI 控制器,便于替代与设计复用。

五、典型应用

  • MCU/MPU 固件与引导代码存储
  • 嵌入式系统配置与参数保存
  • 消费类电子、工业控制与通信设备的非易失性存储
  • 需要快速随机读取或执行就地(XIP 类)代码的场景
  • 校准数据、资产信息及小文件系统存储

六、设计建议与注意事项

  • 电源去耦:在 VCC 附近放置适当的去耦电容,降低高频工作时的电源噪声影响。
  • 时序要求:108 MHz 工作时应核对主控 SPI 时序与 IO 模式切换,避免信号完整性问题。
  • 写保护策略:建议在关键数据区使用硬件写保护或软件保护寄存器,结合 WEL 机制防止误操作。
  • 擦写管理:4 KB 为块擦除单位,设计时考虑擦除粒度并尽量减少不必要的擦写以延长寿命,必要时采用磨损均衡或备份策略。
  • 温度与可靠性:在高温或严苛环境下,注意器件数据保留与擦写寿命随温度变化的影响,做可靠性评估。
  • PCB 布局:高速信号线尽量短且阻抗匹配,CS/CLK 与 IO 走线注意同步与回流路径。

总结:AT25SF321B-SSHB-T 提供高达 108 MHz 的 Quad-SPI 性能、低待机功耗与工业级可靠性,是对固件存储与快速读取有较高要求的嵌入式设计的理想选择。

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