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RENESAS ISL2111ABZ-T ISL2111ABZ
Configuration
1 options
Configuration
22+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- RENESAS ISL2111ABZ-T
- Type
- RENESAS
- Minimum package
- 2500 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- RENESAS
- Electronic Component
- ISL2111ABZ-T
- Electronic Component
- 1
- Package
- SOIC-8
- Electronic Component
- (UVP)
- Electronic Component
- Gate Driver IC
- Electronic Component
- 0.174g
- Electronic Component
- 1
- Features
- Built-in Diode
- Electronic Component
- BM0264865102
- Operating Temperature
- 40℃~+125℃
- Operating Voltage
- 8V~14V
- Load Type
- MOSFET
- Driver
- Electronic Component
- Current(IOH)
- 3A
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
ISL2111ABZ-T 产品概述
一、产品简介
ISL2111ABZ-T 是瑞萨（RENESAS）推出的一款半桥驱动器栅极驱动器 IC，采用 8 引脚 SOIC 封装。该器件为非反相双通道输出，专为驱动功率 MOSFET 而设计，适用于需要高瞬态电流和快速开关响应的电源转换及电机驱动场合。器件内部集成自举二极管和欠压保护，便于与半桥拓扑配合使用。
二、主要规格（关键参数）
- 驱动配置：半桥（High / Low 驱动）
- 驱动通道数：2（双通道）
- 灌电流 IOL：4 A（典型或峰值能力）
- 拉电流 IOH：3 A（典型或峰值能力）
- 工作电压（VCC）：8 V ~ 14 V
- 上升时间 tr：9 ns
- 下降时间 tf：7.5 ns
- 传播延迟 tpHL：32 ns（由高到低）
- 输入高电平 VIH：1.8 V ~ 2.2 V
- 输入低电平 VIL：1.4 V ~ 1.8 V
- 静态电流 Iq：450 μA
- 工作温度范围：-40 ℃ ~ +125 ℃
- 封装：SOIC-8
三、关键特性
- 内置自举二极管，便于高侧驱动的栅极供电设计，减少外部组件数目；
- 欠压保护（UVP），在供电不足或自举电容未就绪时保护 MOSFET，降低误驱动风险；
- 高瞬态驱动能力（3 A / 4 A），适合驱动较大门电容的功率 MOSFET；
- 快速开关（tr/tf ≈ 9 ns / 7.5 ns）和可控传播延迟，有利于提高开关效率并降低切换损耗；
- 宽输入阈值容差，便于与 TTL/CMOS 及不同电平逻辑直接接口。
四、典型应用
- 同步降压（synchronous buck）和升压电源的半桥级驱动；
- 无刷直流电机（BLDC）驱动、伺服和电机控制器；
- 点对点功率级、桥式逆变器以及各种电源管理模块；
- 需要紧凑封装与高开关性能的工业与汽车电子（在符合温度和电压范围内使用）。
五、使用建议与注意事项
- 推荐在 VCC 及自举节点使用低 ESR 去耦电容，靠近芯片封装以抑制电源瞬态；
- 为控制开关过渡速度和振铃，建议在 MOSFET 栅极串入合适的阻尼电阻（Gate resistor）；
- 布局要尽量缩短高电流回流环路，放置门极驱动与功率器件靠近，减小寄生电感；
- 注意输入逻辑电平与器件 VIH/VIL 范围匹配，避免在阈值边沿工作以减少抖动；
- 在高温或高频应用中验证器件功耗与热性能，确保工作温度不超限。
ISL2111ABZ-T 以其集成的自举二极管、欠压保护与较高的瞬态电流能力，为半桥 MOSFET 驱动提供了简单可靠的解决方案，适合多种高性能电源和电机驱动场景。
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