WMSIC Electronic Components

ST STL13N65M2

ModelSTL13N65M2
PackagePowerFlat™(5x6)HV
BrandST
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 24+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
ST(STMicroelectronics) STL13N65M2
Type
ST
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
ST(STMicroelectronics)
Electronic Component
STL13N65M2
Electronic Component
1
Package
PowerFlat™(5x6)HV
Electronic Component
1 N
Type
N
Electronic Component
MOSFET
Electronic Component
0.274g
Electronic Component
1
Electronic Component
BM0258813117
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
52W
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
650V

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

STL13N65M2 产品概述

一、产品定位与核心参数

STL13N65M2 是意法半导体(ST)推出的一款高压 N 沟道功率 MOSFET,额定漏–源电压 Vdss 为 650V、连续漏极电流 Id 为 6.5A。典型导通电阻 RDS(on) 为 475mΩ(Vgs=10V),栅极电荷 Qg≈17nC(10V),输入电容 Ciss≈590pF,输出电容 Coss≈27.5pF,反向传输电容 Crss≈1.1pF。工作温度范围为 −55℃ 到 +150℃,封装为 PowerFlat™(5×6)HV 带裸露散热焊盘的 8 引脚扁平封装。

二、主要电气特性与设计要点

  • 高压特性:650V 的耐压等级适合离线电源及其它宽压差场合。
  • 导通与门驱:RDS(on)=475mΩ 在 10V 门压下测得,表明在高压低电流应用中可接受,但用于大电流场合时导通损耗较高,需评估热耗。栅阈值 Vgs(th)=4V(250µA)偏高,器件不是逻辑电平型,建议使用 10V 规整栅极驱动以保证低 RDS(on)。
  • 开关损耗:Qg≈17nC 和 Coss、Ciss 等参数决定了驱动能量和开关损耗,开关频率增加时驱动损耗上升需注意驱动器能力与功耗预算。Crss 值较小,有利于减小米勒效应对栅驱的影响。

三、封装与热管理

PowerFlat(5×6)HV 封装带有裸露散热垫(EP),利于通过 PCB 大面积铜箔传热。标称耗散功率 Pd=52W(典型热条件下),实际散热能力强烈依赖 PCB 设计(散热铜箔面积、通孔、热层连接)和环境散热条件。设计时应:

  • 在 PCB 下方布置足够铜箔并设计热过孔;
  • 在高功率工况评估结温和热阻,保证结温不超过允许值(工作温度上限 150℃);
  • 考虑合适的散热与保护电路(热关断、过流保护)。

四、适用场景与典型应用

  • 离线开关电源(如反激/正激原边开关)与适配器主开关;
  • 功率因数校正(PFC)辅助开关或低功率级;
  • 荧光灯/LED 驱动、电子镇流器、家电控制的小功率高压开关;
  • 任何需要 650V 耐压但电流需求中等(几安培级)且对封装平面安装有要求的应用。

五、选型建议与注意事项

  • 若工作电流或导通损耗敏感,应考虑更低 RDS(on) 的器件或并联多颗芯片;
  • 栅极驱动器需提供足够电流以快速充放 Qg,同时注意驱动能量和 EMI 管理;
  • 在高频开关场合评估 Coss 与 Qg 对开关损耗的贡献,必要时加装软开关或缓冲网络降低损耗;
  • PCB 热设计与散热焊盘焊接工艺对器件寿命和可靠性至关重要。

六、优势概述

STL13N65M2 在高压耐压与中等电流能力之间提供了平衡,PowerFlat 封装便于低剖面贴装和 PCB 散热,适合需要高耐压、布局紧凑且成本敏感的开关应用。选用时应综合电流、开关频率与散热条件进行评估,以发挥其最佳性能。

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