WMSIC Electronic Components

Sunlord GZ2012D101TF

ModelGZ2012D101TF
Package0805
BrandSUNLORD
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

18 specifications

Core information

Product name
Sunlord GZ2012D101TF
Type
SUNLORD
Minimum package
4000

Technical parameters

Electronic Component
SUNLORD
Electronic Component
GZ2012D101TF
Electronic Component
1
Package
0805
Electronic Component
Ferrite Bead
Electronic Component
±25%
Electronic Component
0.037g
Electronic Component
1
Channel Count
1
Electronic Component
BM0229201077
Operating Temperature
55℃~+125℃
Current
800mA
@Frequency
100Ω@100MHz
Resistor(DCR)
150mΩ
Electronic Component
4000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

GZ2012D101TF 产品概述

一、产品简介

GZ2012D101TF 是顺络(Sunlord)推出的一款0805封装磁珠(ferrite bead),用于抑制高频干扰、改善电磁兼容性(EMC)。该器件在100MHz处标称阻抗为100Ω,公差±25%,额定持续电流为800mA,直流电阻(DCR)仅为150mΩ,适合用于电源线路和高速信号线的高频噪声抑制。工作温度范围宽(-55℃ 到 +125℃),可满足工业级环境要求。

二、主要电气参数

  • 阻抗(Z): 100Ω @ 100MHz,公差 ±25%(即实际阻抗约在75Ω~125Ω范围内)
  • 直流电阻(DCR): 150 mΩ
  • 额定电流(持续): 800 mA
  • 工作温度: -55℃ ~ +125℃
  • 通道数: 单通道(single-line)
  • 封装: 0805(常用尺寸约 2.0 mm × 1.25 mm)

三、性能说明与工程计算

  • 电压降与功耗:在额定电流 800 mA 条件下,电压降 V = I × DCR = 0.8 A × 0.15 Ω = 0.12 V(120 mV);功耗 P = I^2 × DCR = 0.64 A^2 × 0.15 Ω = 0.096 W(约96 mW)。在靠近额定电流工作时,应考虑器件的温升与热量散逸能力,必要时留有安全裕度。
  • 阻抗特性:磁珠对直流和较低频率的影响很小(仅产生微小的直流电阻),但在数十MHz至数百MHz频带内呈现较高阻抗,用于吸收和衰减高频噪声。100MHz 时为标称 100Ω,实际设计时请考虑 ±25% 的公差与装配后频率响应变化。
  • 热稳定性:工作温度范围覆盖常见工业应用,但在高温环境或连续大电流情况下应注意热循环和长期可靠性,建议做温升测试和老化验证。

四、封装与机械信息

  • 封装类型:0805(外形常称 2012 米制,约 2.0 × 1.25 mm)
  • 单通道结构,适合单条电源或信号线的串联安装。
  • 典型焊接工艺:兼容常见 SMT 回流焊流程。为保证焊点可靠性,推荐遵循元件制造商或 PCB 制造规范的回流曲线及焊盘设计。

五、设计与布局建议

  • 放置位置:将磁珠放置在噪声源或电源入口处,靠近 IC 的电源引脚或电源输入端,能最大化抑制从该点发出的高频干扰。
  • 串联使用:作为单线元件,通常串联在电源或信号线上;若需差分线或双通道抑制,请选用相应双通或共模器件。
  • 与旁路电容配合:与合适的去耦/旁路电容(例如 0.1 µF、1 µF)搭配使用,可形成低通滤波效果,抑制更宽频段的噪声。注意电容与磁珠之间的布局距离尽量短以降低寄生感抗。
  • 余量与退让:为了保证长期稳定性与温升裕度,实际应用中建议不长期在额定电流完全满载工作,通常留出 10%~30% 的电流裕量(视散热条件与可靠性要求而定)。
  • 焊盘与机械应力:0805 封装对焊盘设计敏感,确保良好焊接与避免在组装或使用过程中对元件施加弯曲应力,以降低断裂风险。

六、典型应用场景

  • 移动设备与便携终端的电源线滤波与 EMI 抑制
  • IoT、智能家居、无线模块等对电源噪声敏感的电路
  • 主板或模块的局部去耦与高频干扰吸收
  • 工业控制与汽车电子中对高频干扰有抑制需求的电源/信号线路(需确认环境可靠性要求与认证)

七、选型与注意事项

  • 如果系统工作电流较高或需要更低的直流压降,应选择更低 DCR 或更大额定电流的磁珠型号。
  • 对频率响应有严格要求的应用,建议索取或测量该型号的阻抗曲线(Z vs. f),以确认在所关注频段的有效衰减。
  • 在 EMC 验证阶段,应结合实际 PCB 布局进行评估,必要时调整磁珠阻抗值或与其他滤波元件配合优化。
  • 采购时确认物料一致性与来源,避免替代件在阻抗曲线或机械尺寸上有显著差异。

总结:GZ2012D101TF(顺络,0805)为一款面向中低电流电源与单线信号的高频抑制磁珠,具有在 100MHz 处约 100Ω 的阻抗、较低的 DCR 与工业级温度范围,适用于常规 EMI 抑制与电源噪声净化场景。设计时应结合电流裕量、热管理与 PCB 布局进行综合考虑。

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