WMSIC Electronic Components

Sunlord SWPA3010S6R8MT

ModelSWPA3010S6R8MT
PackageSMD,3x3mm
BrandSUNLORD
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration Date code within 2 years

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
Sunlord SWPA3010S6R8MT
Type
SUNLORD
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SUNLORD
Electronic Component
SWPA3010S6R8MT
Electronic Component
1
Package
SMD,3x3mm
Type
Magnetic Display Inductor
Electronic Component
Power Inductor
Electronic Component
±20%
Electronic Component
0.008g
Inductor
6.8uH
Electronic Component
1
Electronic Component
BM0258491031
Current
660mA
Resistor(DCR)
397mΩ
Electronic Component
Electronic Component
Electronic Component
2000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SWPA3010S6R8MT 产品概述

一. 概要说明

SWPA3010S6R8MT 为顺络(Sunlord)推出的 SMD 功率电感,封装尺寸 3.0 × 3.0 mm,标称电感值 6.8 µH,公差 ±20%。额定电流(Ir)为 660 mA,饱和电流(Isat)为 550 mA,直流电阻(DCR)约为 397 mΩ。器件为磁性屏蔽结构(磁胶屏蔽电感),适用于对体积和 EMI 有较高要求的便携式电源和开关电源滤波场合。

二. 主要特点

  • 紧凑封装:SMD 3×3 mm,适合空间受限的移动设备与模块化电源。
  • 中等电感值:6.8 µH,适用于中低频开关电源及能量存储。
  • 屏蔽结构:磁性屏蔽设计降低磁通外泄,减小对周边电路的干扰。
  • 工作电流参数明确:额定 660 mA,饱和 550 mA,便于电流裕量判断。
  • 较高的 DCR(397 mΩ):在设计时需考虑铜耗与效率影响。

三. 电气与热性能说明

  • 电感容差 ±20%:在设计时应考虑电感偏差对电流纹波与控制环路的影响,必要时留裕量或做实测校准。
  • 饱和与额定电流关系:Isat(550 mA)通常定义为电感下降到某一比例时的电流值;建议工作点尽量低于 Isat 以避免显著下降的电感值和磁滞问题。若长期工作接近 Isat,应评估电感对输出电流与稳定性的影响。
  • 损耗估算(示例):DCR = 0.397 Ω,因此在不同电流下的 I^2R 损耗为:
    • 0.50 A 时:P ≈ 0.5^2 × 0.397 ≈ 0.10 W
    • 0.66 A(额定)时:P ≈ 0.66^2 × 0.397 ≈ 0.17 W 由此可见,在接近额定电流时发热显著,需关注周边散热条件与器件温升对寿命的影响。

四. 典型应用

  • 同步/非同步降压(buck)与升压(boost)DC-DC 转换器的输出滤波与能量储存
  • 移动设备、穿戴设备的电源模块
  • LED 驱动、电池供电系统与小功率电源管理模块
  • EMI 抑制与电源输入滤波

五. PCB 布局与使用建议

  • 尽量将电感放置在开关电源 IC 与整流/电容器之间,缩短高电流回路路径,减小寄生电感与辐射。
  • 顶层走宽铜带,必要时在电感下方做散热铜箔或多层过孔帮助导热。
  • 屏蔽结构虽能抑制磁泄露,但仍建议与敏感模拟电路保持一定间距。
  • 在高纹波或高温环境下使用时,应考虑电流降额(derating),例如将连续工作电流控制在 Isat 的 70–80% 以下,或按系统热设计决定。
  • 建议对实际工作条件下的电感值和温升做板级实测,尤其在频率、幅值与温度与规格条件不同的情况下。

六. 选型提示与可靠性

  • 若系统对效率敏感,注意较高的 DCR 会导致较大的导通损耗,必要时选择低 DCR 或更大尺寸电感以降低损耗。
  • 电感值公差 ±20% 适合对精确电感值要求不高的功率滤波场合;对高精度环路设计应预留调节余量或使用更窄公差器件。
  • 屏蔽结构利于通过 EMI 要求,但在高电流、频繁热循环的应用中需关注长期温漂与磁性能退化,建议参考厂商具体的可靠性与寿命测试数据。
  • 订购时请核对完整料号(SWPA3010S6R8MT)与封装、出货形态(卷盘/散装)等信息,并在样机阶段完成板级验证。

如需我进一步给出参考电路示例、PCB 封装建议(过孔、焊盘尺寸)或在特定开关频率下的电流纹波计算,告诉您的开关参数和工作条件,我可以基于这些参数做更精确的设计建议。

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