WMSIC Electronic Components

SGMICRO SGM61012XTDE8G/TR SGM61012XTDE8G

ModelSGM61012XTDE8G/TR
PackageTDFN-8AL(2x2)
BrandSGMICRO
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 22+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
SGMICRO SGM61012XTDE8G / TR
Type
SGMICRO
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SGMICRO
Electronic Component
SGM61012XTDE8G/TR
Electronic Component
1
Package
TDFN-8AL(2x2)
Electronic Component
DC-DC Power Supply IC
Electronic Component
0.047g
Electronic Component
1
Features
Output
Type
Electronic Component
Synchronous
Electronic Component
Electronic Component
BM0230063728
Operating Temperature
40℃~+125℃
Operating Voltage
2.3V~5.5V
Switching Frequency
2MHz
Electronic Component
Electronic Component

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

SGM61012XTDE8G/TR 产品概述

一、产品简介

SGM61012XTDE8G/TR 是圣邦微(SGMICRO)推出的一款降压型同步 DC‑DC 开关稳压器,采用降压式拓扑并集成开关管,适用于 2.3V 至 5.5V 的输入电源,能够输出可调电压范围 0.5V 至 4.0V,最大输出电流 1.2A。器件开关频率高达 2MHz,静态电流仅 8.5µA,工作温度范围 -40℃ 至 +125℃,封装为紧凑的 TDFN‑8AL (2 x 2 mm),非常适合空间受限和低功耗应用场景。

二、主要特性

  • 输入电压范围:2.3V ~ 5.5V
  • 输出电压范围:500mV ~ 4.0V(可调)
  • 最大输出电流:1.2A
  • 开关频率:2MHz(固定或典型值)
  • 同步整流:内置同步整流开关,提升效率并降低外部二极管需求
  • 静态电流(Iq):8.5µA,适合待机节能应用
  • 工作温度:-40℃ ~ +125℃
  • 封装:TDFN‑8AL (2 x 2 mm),带底部散热焊盘
  • 拓扑结构:降压式(Buck),单路输出,可调输出电压

三、优势与适用场景

  • 低静态电流与高开关频率的结合,使器件既适合低功耗待机场合,也能使用小尺寸电感和电容实现紧凑布局。
  • 内置开关管和同步整流简化外部器件,降低 BOM 与占板面积。
  • 适用场景包括便携式设备、可穿戴设备、物联网终端、传感器节点、单节或多节电池供电的嵌入式应用、MCU/FPGA/SoC 的主电源或辅助电源等。

四、设计与外部元件建议

  • 电感:由于工作频率为 2MHz,可选用体积小、低 DCR、饱和电流高于 1.2A 的芯片电感或薄膜电感,典型电感值视占空比与输出纹波要求而定(常见范围 0.47µH ~ 2.2µH)。
  • 输入/输出电容:推荐使用 X5R/X7R 陶瓷电容以获得低 ESR 与稳定温度特性。输入端需足够的去耦电容以抑制开关噪声,输出端电容决定环路稳定性与输出纹波。
  • 版图:尽量缩短 VIN、GND、SW 与输入电容之间的回流环路;暴露焊盘(EP)须焊接至地平面以改善散热;FB 引脚走线应避开开关噪声源,使用短且稳健的回路。
  • 热管理:在高负载或靠近温度极限时,依靠底部散热焊盘和 PCB 热扩散(内层或过孔)以降低结温。

五、保护与应用注意事项

  • 器件为同步整流结构,通常具备对过流、过温和欠压等保护功能(设计时请以芯片详细数据手册为准)。
  • 高开关频率带来的 EMI 需通过布局、磁环、输入滤波和差模/共模滤波器进行控制。
  • 调试时建议先在仿真或评估板上验证环路稳定性和瞬态响应,再优化电感与输出电容组合。

总结:SGM61012XTDE8G/TR 以其宽输入电压、低静态电流、高开关频率和小型封装,适合对体积、效率与待机功耗有严格要求的便携与嵌入式电源设计。设计前请务必参考厂商数据手册与评估板资料,按推荐外围器件与布线规则进行布局与验证。

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