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CL21B105KBFVPNE
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
18
specifications
Core information
- Product name
- SAMSUNG CL21B105KBFVPNE
- Type
- SAMSUNG
- Minimum package
- 2000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- SAMSUNG
- Electronic Component
- CL21B105KBFVPNE
- Electronic Component
- 1
- Electronic Component
- 1uF
- Package
- 0805
- Electronic Component
- SMD Capacitor(MLCC)
- Electronic Component
- ±10%
- Electronic Component
- 0.034g
- Electronic Component
- 1
- Electronic Component
- BM0257686745
- Electronic Component
- X7R
- Voltage
- 50V
- Electronic Component
- Electronic Component
- Electronic Component
- 2000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
CL21B105KBFVPNE 产品概述
一、产品简介
CL21B105KBFVPNE 为 SAMSUNG（三星）生产的多层陶瓷贴片电容（MLCC），标称容量 1µF，公差 ±10%（K），额定电压 50V，介质类型 X7R，封装 0805（约 2.0 × 1.25 mm）。此型号在有限体积内提供较高电容量，适合常见的去耦、滤波与旁路场合。
二、主要特性
- 介质 X7R：工作温度范围宽（典型 -55℃ 至 +125℃），温度特性良好，适用于对温度稳定性有中等要求的电路。
- 低等效串联电阻/电感（ESR/ESL）：MLCC 本身在高频下表现优异，适合高频去耦与瞬态响应要求高的电源线。
- 封装紧凑：0805 大小在布局与空间受限的移动设备、通信模块中有较好平衡。
- 工艺可靠：适用于无铅回流焊流程，机械可靠性良好（注意焊接与封装机械应力控制）。
三、电气性能与使用注意
- 直流偏压效应：陶瓷电容在施加直流偏压时实际容量会下降，X7R 在高电压下的降容较明显，设计时需留有裕量并参考制造商的 DC-bias 曲线。
- 老化特性：铁电陶瓷存在随时间的容量衰减现象（可通过一定温度处理部分恢复），长期使用时应考虑老化影响。
- 温度与频率特性：X7R 在温度和频率变化下容量波动小于高介电常数的一些材料，但不适合精密计时或高稳定度测量电路。
四、典型应用场景
- 数字与模拟芯片的电源去耦与旁路。
- 开关电源输入/输出滤波与能量缓冲（需按 DC-bias 考量实际容量）。
- 滤波电路、耦合/旁路、EMI 抑制。
- 移动终端、通信设备、消费类电子及工业控制模块等一般电子产品。
五、PCB 布局与焊接建议
- 贴近被去耦器件的电源引脚布局，减短回流路径以提升高频性能。
- 与不同容值并联使用，以覆盖更宽的频谱（例如与小容值低 ESL 电容并联）。
- 避免在焊接与后处理过程中对封装施加过大机械应力，焊盘过大或不合理过孔位置可能引起裂纹。
- 遵循厂商的回流焊曲线与推荐焊盘尺寸，确保良好焊接品质。
六、选型要点
在选用 CL21B105KBFVPNE 时，重点考虑直流偏压下的有效容量、工作温度范围、封装与安装应力、以及电路对容差与稳定性的实际要求。若电路对长期容量稳定性或高温高压下性能敏感，可选用更高电压等级、更大封装或不同介质的器件以获得更佳表现。
总结：CL21B105KBFVPNE 以其 1µF/50V、0805 的紧凑组合，在常规电子设计中提供了良好的去耦和滤波解决方案，但在高偏压或高可靠性场合应结合 DC-bias、老化与机械强度等因素进行周全评估。
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