WMSIC Electronic Components

CL21B225KBYNNNE

ModelCL21B225KBYNNNE
Package0805
BrandSAMSUNG
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 26+

Available for RFQ

Technical data

Product details

18 specifications

Core information

Product name
SAMSUNG CL21B225KBYNNNE
Type
SAMSUNG
Minimum package
2000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SAMSUNG
Electronic Component
CL21B225KBYNNNE
Electronic Component
1
Electronic Component
2.2uF
Package
0805
Electronic Component
SMD Capacitor(MLCC)
Electronic Component
±10%
Electronic Component
0.043g
Electronic Component
1
Electronic Component
BM0259740241
Electronic Component
X7R
Voltage
50V
Electronic Component
Electronic Component
Electronic Component
2000

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

CL21B225KBYNNNE 产品概述

一、产品简介

CL21B225KBYNNNE 为三星(SAMSUNG)生产的贴片多层陶瓷电容(MLCC),额定电压 50V,标称电容量 2.2µF,公差 ±10%(K),温度特性为 X7R,封装规格为 0805(约 2.0 × 1.25 mm)。此型号适用于对体积与容量有平衡需求的一般去耦、滤波和储能场合。

二、主要电气参数

  • 容值:2.2µF(标称)
  • 公差:±10%(K)
  • 额定电压:50V DC
  • 温度系数:X7R(-55°C 至 +125°C,温度变动范围内电容变化在 ±15% 以内)
  • 封装:0805(2012 公制)

三、性能要点

  • X7R 陶瓷介质在中等温度范围内稳定,适合一般电源去耦与中等频带滤波。
  • MLCC 具有低等效串联电阻(ESR)和较低等效串联电感(ESL),适合处理瞬态电流。0805 体积在中等水平,兼顾容量与高频性能。
  • 需注意直流偏置效应:在接近额定电压时实际电容会下降,设计时应验证工作电压下的有效电容。

四、应用场景

  • DC-DC 转换器输出侧与输入侧去耦
  • 微处理器、电源管理 IC 的旁路/去耦
  • 音频电路、消费电子、通信设备中的滤波与能量缓冲
  • 对高稳定性定时或高精度测量电路不推荐单独使用

五、封装与焊接建议

  • 兼容标准回流焊工艺,请遵循厂商推荐的回流曲线以防热应力损伤。
  • 布局时尽量靠近 IC 电源引脚以降低寄生感抗;必要时并联小容量低 ESL 电容以改善高频性能。
  • 避免 PCB 弯曲与强机械应力,以防器件端部裂纹导致失效。

六、可靠性与使用注意

  • 陶瓷电容存在随时间的老化效应与温漂,应在关键应用中考虑老化补偿或预老化处理。
  • 存储与贴装前请遵守干燥包装和防潮要求,避免受潮造成焊接缺陷。
  • 在对电容值敏感或长期高压工作场合,建议做实际电压与温度下的测试,并留有裕量或选用额定电压更高/更大容量的器件。

如需更详细的电气特性曲线、回流曲线或在特定工作电压下的直流偏置数据,可提供型号要求以查询厂家数据手册。

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