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ST MMFTN3019E MOSFET MMFTN3019E
Configuration
1 options
Configuration
26+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ST MMFTN3019E
- Type
- ST
- Minimum package
- 4000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ST
- Electronic Component
- MMFTN3019E
- Electronic Component
- 1
- Package
- SOT-523-3
- Electronic Component
- 1 N
- Type
- N
- Electronic Component
- MOSFET
- Electronic Component
- 0.015g
- Electronic Component
- 1
- Electronic Component
- BM0226493311
- Power Dissipation(Pd)
- 150mW
- Electronic Component
- Electronic Component
- Electronic Component
- 4000
- Voltage(Vdss)
- 30V
- Capacitor(Ciss)
- 13pF
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMFTN3019E 产品概述
一、产品概览
MMFTN3019E 是一款小信号 N 沟道场效应晶体管，来自 ST（先科）系列，采用超小封装 SOT-523-3。器件为低电流、低电容、30V 耐压的开关型 MOSFET，适用于对体积、寄生电容和栅极驱动要求较高的小功率电子电路中担当开关、隔离或电平转换角色。
二、主要电气参数
- 类型：N 沟道 MOSFET
- 漏源电压 Vdss：30 V
- 阈值电压 Vgs(th)：1.5 V（典型）
- 导通电阻 RDS(on)：8 Ω @ Vgs=4 V，Id=10 mA
- 连续漏极电流 Id：100 mA
- 功耗 Pd：150 mW
- 输入电容 Ciss：13 pF；输出电容 Coss：9 pF；反向传输电容 Crss：4 pF
- 封装：SOT-523-3（超小封装，适合高密度贴装）
三、器件特性解析
该器件阈值约 1.5 V，接近逻辑电平，可在低电压逻辑驱动下部分开启，但给出的 RDS(on) 在 Vgs=4 V、Id=10 mA 条件下为 8 Ω，表明在较大电流工作时损耗显著，主要面向小信号开关而非功率传输。低 Ciss/Coss/Crss 值有利于快速开关和减小栅极驱动能量，适合高速信号切换或射频路径切换场合。
四、典型应用领域
- 移动设备或便携仪器中的信号开关、隔离或复用电路
- 小电流控制或电平转换（例如微控制器 I/O 控制）
- 接口保护与断开（如在低功耗模式下切断次级电路）
- 高频或快速脉冲信号路径切换，需注意功率与热限制
五、封装与热管理
SOT-523-3 为超小型封装，面积有限，热阻较高。器件额定耗散功率仅 150 mW，实际应用中应避免长时间接近额定功耗。建议在 PCB 设计上优化散热走线、减小相邻热源，并保证工作电流远低于 100 mA 的平均值以避免温升影响可靠性。
六、选型建议与注意事项
- 若应用为信号级开关或低电流控制，MMFTN3019E 为合适选择；若需要传输更大电流或更低导通损耗，应选用 RDS(on) 更低、Pd 更高的功率 MOSFET。
- 注意 RDS(on) 测试条件（Vgs=4 V、Id=10 mA），在实际更高 Id 下 RDS(on) 可能恶化，需按实际工况计算损耗并留有裕度。
- 在高速切换场合，利用其低 Ciss/Coss 优势可减小开关能耗，但仍需考虑栅极驱动阻抗与布局以避免振荡或过冲。
- 小封装对焊接、维修和高温环境敏感，建议在可靠性评估中进行温升仿真和实际测试。
总体来看，MMFTN3019E 以其小体积、低电容与逻辑兼容阈值，适合各类小信号开关与低功耗控制应用，但不适合高电流或高功率场景。
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