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ST SS16 Schottky diode SS16
Configuration
1 options
Configuration
25+
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ST SS16
- Type
- ST
- Minimum package
- 5000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ST
- Electronic Component
- SS16
- Electronic Component
- 1
- Package
- SMA(DO-214AC)
- Electronic Component
- Schottky Diode
- Electronic Component
- 0.13g
- Electronic Component
- 1
- Electronic Component
- BM0230898842
- Current
- 1A
- Diode
- 1
- Current(Ir)
- 500uA@60V
- (Vf)
- 700mV@1A
- Electronic Component
- 55℃~+125℃
- Electronic Component
- Electronic Component
- Electronic Component
- 5000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
SS16 产品概述
一、概览
SS16 是一款常见的肖特基（Schottky）整流二极管，由 ST（先科）提供，封装为 SMA（DO-214AC）。该器件定位为 1A 级别的低正向压降整流元件，适用于开关电源、DC-DC 变换、电池充放电与反向保护等场景。凭借较低的正向压降与快速响应特性，在提高效率和降低发热方面具有显著优势。
二、主要特性
- 正向压降 Vf：700 mV @ 1 A
- 直流反向耐压 Vr：60 V
- 连续整流电流：1 A
- 反向电流 Ir：500 µA @ 60 V
- 非重复峰值浪涌电流 Ifsm：30 A
- 工作结温范围：-55 °C ～ +125 °C
- 封装：SMA (DO-214AC)
- 品牌：ST（先科）
三、电气与热性能解读
在 1 A 工作电流下，典型正向压降为 0.7 V，对应的功耗约为 0.7 W（P = Vf × I）。在实际电路中应考虑持续功耗及环境温度对结温的影响；器件允许的工作结温范围为 -55 °C ～ +125 °C，但反向漏电流 Ir 随温度上升会显著增加，数据标注为 500 µA @ 60 V（通常是在室温或规定测试温度下）。Ifsm = 30 A 表明器件能够承受短时浪涌（峰值）电流，但该参数为非重复峰值，应避免在设计中长期或频繁靠近该值工作。
四、封装与散热建议
SMA（DO-214AC）封装体积小，便于表面贴装，但散热能力有限。建议在 PCB 设计时：
- 增大焊盘面积和下层铜箔以利散热；
- 在正向电流接近 1 A 或更高平均功耗场合，考虑使用散热铜柱或散热孔（vias）导热到内层/底层；
- 保持良好焊点和可靠的焊接工艺，避免过热导致封装应力或焊接缺陷。
五、典型应用
- 开关电源整流与续流二极管
- DC-DC 转换器输出整流
- 电池充放电路径与反向保护
- 电源隔离与浪涌抑制（配合限流/保险丝）
- 汽车电子和工业控制中对低 Vf 要求的场合（需注意 60 V 的耐压上限）
六、选型与使用注意事项
- 确认最大反向电压 Vr=60 V 能否满足系统峰值及浪涌要求，必要时预留安全裕量或选用更高耐压器件。
- 注意高温下反向漏电流增加对系统静态损耗和热稳定性的影响；若工作环境温度高，应评估 Ir 在最高结温下的表现。
- 若需更低压降或更大平均电流，可考虑并联多颗器件，但需注意电流均流与热平衡问题。
- 浪涌电流虽能承受 30 A 瞬间冲击，但应通过电路设计（限流器件或熔断器）控制重复冲击以延长器件寿命。
七、结语
SS16（ST）以其低正向压降、快速特性和紧凑的 SMA 封装适合多种中低功率整流场合。合理的散热设计、合适的电压裕量与对高温漏电流的考虑，是保证在实际应用中发挥稳定性能的关键。若系统对漏电、耐压或功耗有更严苛要求，可在选型阶段比对更高规格或不同封装的肖特基器件。
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