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ST MMBTA42 transistor MMBTA42
Configuration
1 options
Configuration
Date code within 2 years
Available for RFQ
Technical data
Product details
19
specifications
Core information
- Product name
- ST MMBTA42
- Type
- ST
- Minimum package
- 3000 圆盘
Technical parameters
- Electronic Component
- Electronic Component
- Electronic Component
- ST
- Electronic Component
- MMBTA42
- Electronic Component
- 1
- Package
- SOT-23
- Electronic Component
- 1 NPN
- Electronic Component
- Transistor(BJT)
- Electronic Component
- 0.028g
- Electronic Component
- 1
- Electronic Component
- BM0232256310
- Operating Temperature
- 55℃~+150℃
- Transistor Type
- NPN
- Frequency(f T)
- 50MHz
- Power Dissipation(Pd)
- 350mW
- Electronic Component
- Electronic Component
- Electronic Component
- 3000
For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.
MMBTA42 产品概述
一 特性概述
MMBTA42 是一款高压 NPN 小信号三极管，封装为 SOT-23，适合需要高耐压与小体积的表面贴装电路。该器件拥有 300V 的集—射极击穿电压 (Vceo) 与最高 500mA 的集电极电流能力，结合 350mW 的耗散功率，适用于高压开关、启动电路与小功率放大场合。品牌信息：ST（先科）提供该型号的常见版本。
二 主要参数说明
- 晶体管类型：NPN（单颗，数量：1）
- 最大集电极电流 Ic：500mA
- 集—射极击穿电压 Vceo：300V（高耐压，适合高压侧使用）
- 耗散功率 Pd：350mW（SOT-23 封装的功耗受限，需注意散热与功率管理）
- 直流电流增益 hFE：≈80（在 Ic=10mA、Vce=10V 条件下）
- 特征频率 fT：50MHz（适合中低频放大与开关）
- 集电极截止电流 Icbo：100nA（漏电流小，有利于高阻态性能）
- 集电极饱和电压 VCE(sat)：约 500mV（在 IC=20mA、IB=2mA 条件下）
- 工作结温度范围：-55℃ ~ +150℃（Tj）
- 射基极击穿电压 Vebo：6V
三 典型应用
- 高压信号开关与脉冲驱动（例如小型电源启动电路或高压脉冲源）
- 初级侧低功率放大器与电平移位（中低频段，受 fT 限制）
- 保护电路与过压检测（利用高 Vceo 与低 Icbo 的组合）
- 便携或受限空间的表面贴装电子产品，需高耐压但低功耗场景
四 设计与使用建议
- 散热与功耗：SOT-23 的 Pd 为 350mW，实际电路中应考虑散热路径与环境温度，必要时通过 PCB 大铜箔或热通孔进行散热。长期高电流工作需对耗散做严谨估算与降额。
- 饱和驱动：若用作开关，保证基极驱动足够以达到所需饱和度；参考 VCE(sat)=0.5V@20mA/2mA，设计基极限流与驱动源电阻。
- 高压注意事项：Vceo=300V 表示器件可承受较高的反向电压，但在高压边缘需控制爬电距离与 PCB 绝缘。
- 噪声与频率：fT=50MHz，适合音频至射频前段的某些应用，但不适合高频射频功率放大。
- 基极限制：Vebo=6V，基极-发射极间反向电压承受有限，避免在设计中施加过高反向偏压。
五 包装与选购建议
该型号常见封装为 SOT-23，便于自动贴装与小型化设计。选购时建议对照厂方数据手册核对管脚定义、最大额定值与温度降额曲线；若需更高功率或不同增益特性，可参考同系列或功率更大的封装替代品。最后，针对高压和高温环境下的可靠性，请优先选择来自正规渠道并查看批次质量报告。
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