WMSIC Electronic Components

SHIKUES 2SK3018W

Model2SK3018W
PackageSOT-323
BrandSHIKUES
Price Price on request Electronic component prices change quickly with market supply and demand. Please refer to the latest WMSIC quotation for current pricing.
Configuration
1 options
Configuration 25+

Available for RFQ

Technical data

Product details

19 specifications

Core information

Product name
SHIKUES 2SK3018W
Type
SHIKUES
Minimum package
3000 圆盘

Technical parameters

Electronic Component
Electronic Component
Electronic Component
SHIKUES
Electronic Component
2SK3018W
Electronic Component
1
Package
SOT-323
Electronic Component
1 N
Electronic Component
MOSFET
Electronic Component
0.032g
Electronic Component
1
Electronic Component
BM0265580750
Operating Temperature
55℃~+150℃
Power Dissipation(Pd)
200mW
Electronic Component
Electronic Component
Electronic Component
3000
Voltage(Vdss)
30V
Capacitor(Ciss)
13pF

For datasheets, package documents, compatible-part guidance, or other technical resources, contact WMSIC customer service. Availability is confirmed case by case.

2SK3018W 产品概述

概述

2SK3018W是一款高性能N沟道场效应管(MOSFET),广泛应用于低功耗电子产品和电源管理等领域。其主要参数包括功率消耗上限200mW、最大漏源电压30V和连续漏极电流可达100mA。这款MOSFET具有较低的导通电阻和良好的电容特性,适合高效的开关控制和信号调理应用。

关键特性

  1. 功率特性:2SK3018W的最大功耗为200mW,这使其在低功耗设计中非常适用。它能够在多个电路中操作,而无需担心过热或效率降低。

  2. 电压和电流:

    • 漏源电压 (Vdss):最高可承受30V的工作电压,适合各类小型电源管理和控制系统。
    • 连续漏极电流 (Id):支持1mA到100mA的电流,这为很多电路提供了灵活性,如在微处理器周围的驱动控制。
  3. 导通电阻 (RDS(on)):在应用2.5V的栅极电压下,导通电阻为13Ω,这在控制电流时能够有效降低损耗,提高能效。

  4. 输入和反向传输电容:

    • 输入电容 (Ciss):为13pF,表明其在高频应用中仍能保持良好的性能。
    • 反向传输电容 (Crss):为4pF,低反向传输电容很大程度上帮助减少信号延迟,提升信号处理速度。
  5. 工作温度范围:工作温度范围为-55℃至+150℃,使得该器件适用于各种严苛环境和温度变化大的应用场景。

  6. 阈值电压 (Vgs(th)):阈值电压为800mV,适合在低电压和低功耗的场合使用,满足现代电子设备对低能耗的需求。

封装与品牌

产品采用SOT-323-3封装,使其在空间受限的设计中具备良好的适应性。作为时科(SHIKUES)品牌的代表,2SK3018W保证了高品质标准和可靠性,满足电子设计不断提高的可靠性要求。

应用领域

2SK3018W广泛应用于:

  • 电源管理:在电源开关、稳压电源、低功耗DC-DC转换器中起到关键作用。
  • 信号调理:在音频和视频信号的放大、处理和切换中,凭借其超低电容特性,能够保证信号的完整性。
  • 驱动电路:适用于微处理器的IO状态控制,适应嵌入式系统的发展需求。
  • 消费电子:如手机、便携式仪器等低功耗设备。

结论

总而言之,2SK3018W是一款具备优异性能参数的N沟道MOSFET,兼具高功率、低导通电阻及广泛的工作温度适应性,特别适合在现代电子设计中应用。无论是在消费类电子产品,还是在工业控制设备中,其都展现出了良好的应用潜力,能够为设计工程师提供更为高效可靠的解决方案。

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